Energy Dissipation Pathways in Few-Layer MoS2 Nanoelectromechanical Systems

Abstract Free standing, atomically thin transition metal dichalcogenides are a new class of ultralightweight nanoelectromechanical systems with potentially game-changing electro- and opto-mechanical properties, however, the energy dissipation pathways that fundamentally limit the performance of thes...

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Autores principales:	Bernard R. Matis, Brian H. Houston, Jeffrey W. Baldwin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/fbf969f26c8443deb0a016ff8091b80b
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spelling	oai:doaj.org-article:fbf969f26c8443deb0a016ff8091b80b2021-12-02T15:05:18ZEnergy Dissipation Pathways in Few-Layer MoS2 Nanoelectromechanical Systems10.1038/s41598-017-05730-12045-2322https://doaj.org/article/fbf969f26c8443deb0a016ff8091b80b2017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05730-1https://doaj.org/toc/2045-2322Abstract Free standing, atomically thin transition metal dichalcogenides are a new class of ultralightweight nanoelectromechanical systems with potentially game-changing electro- and opto-mechanical properties, however, the energy dissipation pathways that fundamentally limit the performance of these systems is still poorly understood. Here, we identify the dominant energy dissipation pathways in few-layer MoS2 nanoelectromechanical systems. The low temperature quality factors and resonant frequencies are shown to significantly decrease upon heating to 293 K, and we find the temperature dependence of the energy dissipation can be explained when accounting for both intrinsic and extrinsic damping sources. A transition in the dominant dissipation pathways occurs at T ~ 110 K with relatively larger contributions from phonon-phonon and electrostatic interactions for T > 110 K and larger contributions from clamping losses for T < 110 K. We further demonstrate a room temperature thermomechanical-noise-limited force sensitivity of ~8 fN/Hz1/2 that, despite multiple dissipation pathways, remains effectively constant over the course of more than four years. Our results provide insight into the mechanisms limiting the performance of nanoelectromechanical systems derived from few-layer materials, which is vital to the development of next-generation force and mass sensors.Bernard R. MatisBrian H. HoustonJeffrey W. BaldwinNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Bernard R. Matis Brian H. Houston Jeffrey W. Baldwin Energy Dissipation Pathways in Few-Layer MoS2 Nanoelectromechanical Systems
description	Abstract Free standing, atomically thin transition metal dichalcogenides are a new class of ultralightweight nanoelectromechanical systems with potentially game-changing electro- and opto-mechanical properties, however, the energy dissipation pathways that fundamentally limit the performance of these systems is still poorly understood. Here, we identify the dominant energy dissipation pathways in few-layer MoS2 nanoelectromechanical systems. The low temperature quality factors and resonant frequencies are shown to significantly decrease upon heating to 293 K, and we find the temperature dependence of the energy dissipation can be explained when accounting for both intrinsic and extrinsic damping sources. A transition in the dominant dissipation pathways occurs at T ~ 110 K with relatively larger contributions from phonon-phonon and electrostatic interactions for T > 110 K and larger contributions from clamping losses for T < 110 K. We further demonstrate a room temperature thermomechanical-noise-limited force sensitivity of ~8 fN/Hz1/2 that, despite multiple dissipation pathways, remains effectively constant over the course of more than four years. Our results provide insight into the mechanisms limiting the performance of nanoelectromechanical systems derived from few-layer materials, which is vital to the development of next-generation force and mass sensors.
format	article
author	Bernard R. Matis Brian H. Houston Jeffrey W. Baldwin
author_facet	Bernard R. Matis Brian H. Houston Jeffrey W. Baldwin
author_sort	Bernard R. Matis
title	Energy Dissipation Pathways in Few-Layer MoS2 Nanoelectromechanical Systems
title_short	Energy Dissipation Pathways in Few-Layer MoS2 Nanoelectromechanical Systems
title_full	Energy Dissipation Pathways in Few-Layer MoS2 Nanoelectromechanical Systems
title_fullStr	Energy Dissipation Pathways in Few-Layer MoS2 Nanoelectromechanical Systems
title_full_unstemmed	Energy Dissipation Pathways in Few-Layer MoS2 Nanoelectromechanical Systems
title_sort	energy dissipation pathways in few-layer mos2 nanoelectromechanical systems
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/fbf969f26c8443deb0a016ff8091b80b
work_keys_str_mv	AT bernardrmatis energydissipationpathwaysinfewlayermos2nanoelectromechanicalsystems AT brianhhouston energydissipationpathwaysinfewlayermos2nanoelectromechanicalsystems AT jeffreywbaldwin energydissipationpathwaysinfewlayermos2nanoelectromechanicalsystems
_version_	1718388932446519296

Energy Dissipation Pathways in Few-Layer MoS2 Nanoelectromechanical Systems

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