Efficient Film Fabrication and Characterization of Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) (PEDOT:PSS)-Metalloporphine Nanocomposite and Its Application as Semiconductor Material

The use of composite films with semiconductor behavior is an alternative to enhance the efficiency of optoelectronic devices. Composite films of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and metalloporphines (MPs; M = Co, Cu, Pd) have been prepared by spin-coating. The PEDO...

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Autores principales: María Elena Sánchez-Vergara, Leon Hamui, Daniela González-Verdugo, Ismael Cosme
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Publicado: MDPI AG 2021
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spelling oai:doaj.org-article:fc75abc9e6d442ebb7f24e84e01209582021-11-25T18:49:19ZEfficient Film Fabrication and Characterization of Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) (PEDOT:PSS)-Metalloporphine Nanocomposite and Its Application as Semiconductor Material10.3390/polym132240082073-4360https://doaj.org/article/fc75abc9e6d442ebb7f24e84e01209582021-11-01T00:00:00Zhttps://www.mdpi.com/2073-4360/13/22/4008https://doaj.org/toc/2073-4360The use of composite films with semiconductor behavior is an alternative to enhance the efficiency of optoelectronic devices. Composite films of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and metalloporphines (MPs; M = Co, Cu, Pd) have been prepared by spin-coating. The PEDOT:PSS-MP films were treated with isopropanol (IPA) vapor to modify the polymer structure from benzoid to quinoid. The quinoid structure promotes improvements in the optical and electrical behavior of films. The composite films’ morphology and structure were characterized using infrared and Raman spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM). Composite films were analyzed for their optical behavior by ultraviolet-visible spectroscopy: at λ < 450 nm, the films become transparent, indicating the capacity to be used as transparent electrodes in optoelectronic devices. At λ ≥ 450 nm, the absorbance in the films increased significantly. The CoP showed an 8 times larger current density compared to the CuP. A light induced change in the J-V curves was observed, and it is larger for the CoP. The conductivity values yielded between 1.23 × 10<sup>2</sup> and 1.92 × 10<sup>3</sup> Scm<sup>−1</sup> and were higher in forward bias.María Elena Sánchez-VergaraLeon HamuiDaniela González-VerdugoIsmael CosmeMDPI AGarticlePEDOT:PSSporphinecomposite filmvapor treatmentelectrical propertiesOrganic chemistryQD241-441ENPolymers, Vol 13, Iss 4008, p 4008 (2021)
institution DOAJ
collection DOAJ
language EN
topic PEDOT:PSS
porphine
composite film
vapor treatment
electrical properties
Organic chemistry
QD241-441
spellingShingle PEDOT:PSS
porphine
composite film
vapor treatment
electrical properties
Organic chemistry
QD241-441
María Elena Sánchez-Vergara
Leon Hamui
Daniela González-Verdugo
Ismael Cosme
Efficient Film Fabrication and Characterization of Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) (PEDOT:PSS)-Metalloporphine Nanocomposite and Its Application as Semiconductor Material
description The use of composite films with semiconductor behavior is an alternative to enhance the efficiency of optoelectronic devices. Composite films of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and metalloporphines (MPs; M = Co, Cu, Pd) have been prepared by spin-coating. The PEDOT:PSS-MP films were treated with isopropanol (IPA) vapor to modify the polymer structure from benzoid to quinoid. The quinoid structure promotes improvements in the optical and electrical behavior of films. The composite films’ morphology and structure were characterized using infrared and Raman spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM). Composite films were analyzed for their optical behavior by ultraviolet-visible spectroscopy: at λ < 450 nm, the films become transparent, indicating the capacity to be used as transparent electrodes in optoelectronic devices. At λ ≥ 450 nm, the absorbance in the films increased significantly. The CoP showed an 8 times larger current density compared to the CuP. A light induced change in the J-V curves was observed, and it is larger for the CoP. The conductivity values yielded between 1.23 × 10<sup>2</sup> and 1.92 × 10<sup>3</sup> Scm<sup>−1</sup> and were higher in forward bias.
format article
author María Elena Sánchez-Vergara
Leon Hamui
Daniela González-Verdugo
Ismael Cosme
author_facet María Elena Sánchez-Vergara
Leon Hamui
Daniela González-Verdugo
Ismael Cosme
author_sort María Elena Sánchez-Vergara
title Efficient Film Fabrication and Characterization of Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) (PEDOT:PSS)-Metalloporphine Nanocomposite and Its Application as Semiconductor Material
title_short Efficient Film Fabrication and Characterization of Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) (PEDOT:PSS)-Metalloporphine Nanocomposite and Its Application as Semiconductor Material
title_full Efficient Film Fabrication and Characterization of Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) (PEDOT:PSS)-Metalloporphine Nanocomposite and Its Application as Semiconductor Material
title_fullStr Efficient Film Fabrication and Characterization of Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) (PEDOT:PSS)-Metalloporphine Nanocomposite and Its Application as Semiconductor Material
title_full_unstemmed Efficient Film Fabrication and Characterization of Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) (PEDOT:PSS)-Metalloporphine Nanocomposite and Its Application as Semiconductor Material
title_sort efficient film fabrication and characterization of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (pedot:pss)-metalloporphine nanocomposite and its application as semiconductor material
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/fc75abc9e6d442ebb7f24e84e0120958
work_keys_str_mv AT mariaelenasanchezvergara efficientfilmfabricationandcharacterizationofpoly34ethylenedioxythiophenepolystyrenesulfonatepedotpssmetalloporphinenanocompositeanditsapplicationassemiconductormaterial
AT leonhamui efficientfilmfabricationandcharacterizationofpoly34ethylenedioxythiophenepolystyrenesulfonatepedotpssmetalloporphinenanocompositeanditsapplicationassemiconductormaterial
AT danielagonzalezverdugo efficientfilmfabricationandcharacterizationofpoly34ethylenedioxythiophenepolystyrenesulfonatepedotpssmetalloporphinenanocompositeanditsapplicationassemiconductormaterial
AT ismaelcosme efficientfilmfabricationandcharacterizationofpoly34ethylenedioxythiophenepolystyrenesulfonatepedotpssmetalloporphinenanocompositeanditsapplicationassemiconductormaterial
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