Properties of diode-like membranes produced by plasma modification
A new type of single bipolar membranes was obtained by plasma polymerization that possess asymmetry of conductivity − the effect of the current rectification similar to p-n transition in semiconductors. To produce membranes with diode-like properties, polymer layers formed from aniline by plasma...
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2007
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oai:doaj.org-article:fcd742417c334798850997e224ad88252021-11-21T12:08:47ZProperties of diode-like membranes produced by plasma modification 2537-63651810-648Xhttps://doaj.org/article/fcd742417c334798850997e224ad88252007-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2007/article/3695https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365A new type of single bipolar membranes was obtained by plasma polymerization that possess asymmetry of conductivity − the effect of the current rectification similar to p-n transition in semiconductors. To produce membranes with diode-like properties, polymer layers formed from aniline by plasma were deposited on one side of poly(ethylene terephthalate) track membranes. In order to increase the rectification effect, this polymeric layer was doped by iodine. Craveţ, L.Dmitriev, SergheiD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 6, Iss 1, Pp 110-116 (2007) |
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DOAJ |
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EN |
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Physics QC1-999 Electronics TK7800-8360 |
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Physics QC1-999 Electronics TK7800-8360 Craveţ, L. Dmitriev, Serghei Properties of diode-like membranes produced by plasma modification |
description |
A new type of single bipolar membranes was obtained by plasma polymerization that
possess asymmetry of conductivity − the effect of the current rectification similar to p-n transition in semiconductors. To produce membranes with diode-like properties, polymer layers
formed from aniline by plasma were deposited on one side of poly(ethylene terephthalate)
track membranes. In order to increase the rectification effect, this polymeric layer was doped
by iodine. |
format |
article |
author |
Craveţ, L. Dmitriev, Serghei |
author_facet |
Craveţ, L. Dmitriev, Serghei |
author_sort |
Craveţ, L. |
title |
Properties of diode-like membranes produced by plasma modification |
title_short |
Properties of diode-like membranes produced by plasma modification |
title_full |
Properties of diode-like membranes produced by plasma modification |
title_fullStr |
Properties of diode-like membranes produced by plasma modification |
title_full_unstemmed |
Properties of diode-like membranes produced by plasma modification |
title_sort |
properties of diode-like membranes produced by plasma modification |
publisher |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
publishDate |
2007 |
url |
https://doaj.org/article/fcd742417c334798850997e224ad8825 |
work_keys_str_mv |
AT cravetl propertiesofdiodelikemembranesproducedbyplasmamodification AT dmitrievserghei propertiesofdiodelikemembranesproducedbyplasmamodification |
_version_ |
1718419222126657536 |