Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

Abstract TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching...

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Autores principales:	Sera Kwon, Min-Jung Kim, Kwun-Bum Chung
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/fcd976bacc9749d08e45ab2a4c0c3e90
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spelling	oai:doaj.org-article:fcd976bacc9749d08e45ab2a4c0c3e902021-12-02T17:01:49ZMulti-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles10.1038/s41598-021-89315-z2045-2322https://doaj.org/article/fcd976bacc9749d08e45ab2a4c0c3e902021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-89315-zhttps://doaj.org/toc/2045-2322Abstract TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.Sera KwonMin-Jung KimKwun-Bum ChungNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Sera Kwon Min-Jung Kim Kwun-Bum Chung Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles
description	Abstract TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.
format	article
author	Sera Kwon Min-Jung Kim Kwun-Bum Chung
author_facet	Sera Kwon Min-Jung Kim Kwun-Bum Chung
author_sort	Sera Kwon
title	Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles
title_short	Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles
title_full	Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles
title_fullStr	Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles
title_full_unstemmed	Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles
title_sort	multi-level characteristics of tiox transparent non-volatile resistive switching device by embedding sio2 nanoparticles
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/fcd976bacc9749d08e45ab2a4c0c3e90
work_keys_str_mv	AT serakwon multilevelcharacteristicsoftioxtransparentnonvolatileresistiveswitchingdevicebyembeddingsio2nanoparticles AT minjungkim multilevelcharacteristicsoftioxtransparentnonvolatileresistiveswitchingdevicebyembeddingsio2nanoparticles AT kwunbumchung multilevelcharacteristicsoftioxtransparentnonvolatileresistiveswitchingdevicebyembeddingsio2nanoparticles
_version_	1718382059524718592

Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

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