Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles
Abstract TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/fcd976bacc9749d08e45ab2a4c0c3e90 |
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