Crystalline structure and photoluminescence of GaSe-CdSe nanocomposite

A material consisting of CdSe and GaSe crystallites with average dimensions of 34 nm and 30 nm respectively was obtained by heat treatment at 753K and 853K of GaSe single crystal plates in Cd vapors during 24 hours. As a result of Cd atoms interaction with Se atoms CdSe layers are formed both onto o...

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Autores principales: Dmitroglo, Liliana, Evtodiev, Igor, Caraman, Iuliana, Canţer, Valeriu, Untila, Dumitru, Stamate, Marius, Gaşin, Petru
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Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2015
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Acceso en línea:https://doaj.org/article/fd11fd1ae086442a8f98c175c2503cde
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spelling oai:doaj.org-article:fd11fd1ae086442a8f98c175c2503cde2021-11-21T11:58:12ZCrystalline structure and photoluminescence of GaSe-CdSe nanocomposite535.37:548.5712537-63651810-648Xhttps://doaj.org/article/fd11fd1ae086442a8f98c175c2503cde2015-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2015/article/43547https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365A material consisting of CdSe and GaSe crystallites with average dimensions of 34 nm and 30 nm respectively was obtained by heat treatment at 753K and 853K of GaSe single crystal plates in Cd vapors during 24 hours. As a result of Cd atoms interaction with Se atoms CdSe layers are formed both onto outer surface and at interface of layered Se-Ga-Ga-Se packages. CdSe crystallites on the surface grow in the form of plates along C6 crystallographic axis. Photoluminescence spectra of the composite, at 78K and 300K, contain predominant bands from the luminescent emission of GaSe and CdSe components. Dmitroglo, LilianaEvtodiev, IgorCaraman, IulianaCanţer, ValeriuUntila, DumitruStamate, MariusGaşin, PetruD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 14, Iss 3-4, Pp 167-176 (2015)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Dmitroglo, Liliana
Evtodiev, Igor
Caraman, Iuliana
Canţer, Valeriu
Untila, Dumitru
Stamate, Marius
Gaşin, Petru
Crystalline structure and photoluminescence of GaSe-CdSe nanocomposite
description A material consisting of CdSe and GaSe crystallites with average dimensions of 34 nm and 30 nm respectively was obtained by heat treatment at 753K and 853K of GaSe single crystal plates in Cd vapors during 24 hours. As a result of Cd atoms interaction with Se atoms CdSe layers are formed both onto outer surface and at interface of layered Se-Ga-Ga-Se packages. CdSe crystallites on the surface grow in the form of plates along C6 crystallographic axis. Photoluminescence spectra of the composite, at 78K and 300K, contain predominant bands from the luminescent emission of GaSe and CdSe components.
format article
author Dmitroglo, Liliana
Evtodiev, Igor
Caraman, Iuliana
Canţer, Valeriu
Untila, Dumitru
Stamate, Marius
Gaşin, Petru
author_facet Dmitroglo, Liliana
Evtodiev, Igor
Caraman, Iuliana
Canţer, Valeriu
Untila, Dumitru
Stamate, Marius
Gaşin, Petru
author_sort Dmitroglo, Liliana
title Crystalline structure and photoluminescence of GaSe-CdSe nanocomposite
title_short Crystalline structure and photoluminescence of GaSe-CdSe nanocomposite
title_full Crystalline structure and photoluminescence of GaSe-CdSe nanocomposite
title_fullStr Crystalline structure and photoluminescence of GaSe-CdSe nanocomposite
title_full_unstemmed Crystalline structure and photoluminescence of GaSe-CdSe nanocomposite
title_sort crystalline structure and photoluminescence of gase-cdse nanocomposite
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2015
url https://doaj.org/article/fd11fd1ae086442a8f98c175c2503cde
work_keys_str_mv AT dmitrogloliliana crystallinestructureandphotoluminescenceofgasecdsenanocomposite
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