Direct observation of excitonic instability in Ta2NiSe5

Concominant structural and electronic phase transitions in the excitonic insulator candidate Ta2NiSe5 make the identification of the driving mechanism of the transition challenging. Here, the authors report evidence for electronically-driven transition via Raman susceptibility measurements.

Guardado en:
Detalles Bibliográficos
Autores principales: Kwangrae Kim, Hoon Kim, Jonghwan Kim, Changil Kwon, Jun Sung Kim, B. J. Kim
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Q
Acceso en línea:https://doaj.org/article/fd4dc591b0f8433ca9b448a1aa0d2f90
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!