Direct observation of excitonic instability in Ta2NiSe5
Concominant structural and electronic phase transitions in the excitonic insulator candidate Ta2NiSe5 make the identification of the driving mechanism of the transition challenging. Here, the authors report evidence for electronically-driven transition via Raman susceptibility measurements.
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Autores principales: | Kwangrae Kim, Hoon Kim, Jonghwan Kim, Changil Kwon, Jun Sung Kim, B. J. Kim |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
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Materias: | |
Acceso en línea: | https://doaj.org/article/fd4dc591b0f8433ca9b448a1aa0d2f90 |
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