Direct observation of excitonic instability in Ta2NiSe5

Concominant structural and electronic phase transitions in the excitonic insulator candidate Ta2NiSe5 make the identification of the driving mechanism of the transition challenging. Here, the authors report evidence for electronically-driven transition via Raman susceptibility measurements.

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Auteurs principaux: Kwangrae Kim, Hoon Kim, Jonghwan Kim, Changil Kwon, Jun Sung Kim, B. J. Kim
Format: article
Langue:EN
Publié: Nature Portfolio 2021
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Accès en ligne:https://doaj.org/article/fd4dc591b0f8433ca9b448a1aa0d2f90
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