CdS/PbSe Heterojunction Made via Chemical Bath Deposition and Ionic Exchange Processes to Develop Low-Cost and Scalable Devices

Complete optoelectronic devices present major difficulties to be built by aqueous chemical deposition. In this work, a ITO/CdS/PbSe heterostructure was developed, depositing CdS over an ITO-coated substrate via a chemical bath deposition (CBD) technique. The next step involved the growth of a plumbo...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	José Antonio Heredia-Cancino, Oscar Salcido, Ricardo Britto-Hurtado, Sayra Guadalupe Ruvalcaba-Manzo, Ramón Ochoa-Landín, Santos Jesús Castillo
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	heterojunction cadmium sulfide lead selenide chemical bath deposition cost-effective processes scalability Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/fd5c5390b4c94b418d6a3ced8399f4aa
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:fd5c5390b4c94b418d6a3ced8399f4aa
record_format	dspace
spelling	oai:doaj.org-article:fd5c5390b4c94b418d6a3ced8399f4aa2021-11-25T16:40:55ZCdS/PbSe Heterojunction Made via Chemical Bath Deposition and Ionic Exchange Processes to Develop Low-Cost and Scalable Devices10.3390/app1122109142076-3417https://doaj.org/article/fd5c5390b4c94b418d6a3ced8399f4aa2021-11-01T00:00:00Zhttps://www.mdpi.com/2076-3417/11/22/10914https://doaj.org/toc/2076-3417Complete optoelectronic devices present major difficulties to be built by aqueous chemical deposition. In this work, a ITO/CdS/PbSe heterostructure was developed, depositing CdS over an ITO-coated substrate via a chemical bath deposition (CBD) technique. The next step involved the growth of a plumbonacrite film over CdS via CBD, where the film acted as a precursor film to be converted to PbSe via ion exchange. The characterization of each material involved in the heterostructure were as follows: the CdS thin films presented a hexagonal crystalline structure and bandgap of 2.42 eV; PbSe had a cubic structure and a bandgap of 0.34 eV. I vs. V measurements allowed the observation of the electrical behavior, which showed a change from an ohmic to diode response by applying a thermal annealing at 150 °C for 5 min. The forward bias of the diode response was in the order of 0.8 V, and the current-voltage characteristics were analyzed by using the modified Shockley model, obtaining an ideality factor of 2.47, being similar to a Schottky diode. Therefore, the reported process to synthesize an ITO/CdS/PbSe heterostructure by aqueous chemical methods was successful and could be used to develop optoelectronic devices.José Antonio Heredia-CancinoOscar SalcidoRicardo Britto-HurtadoSayra Guadalupe Ruvalcaba-ManzoRamón Ochoa-LandínSantos Jesús CastilloMDPI AGarticleheterojunctioncadmium sulfidelead selenidechemical bath depositioncost-effective processesscalabilityTechnologyTEngineering (General). Civil engineering (General)TA1-2040Biology (General)QH301-705.5PhysicsQC1-999ChemistryQD1-999ENApplied Sciences, Vol 11, Iss 10914, p 10914 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	heterojunction cadmium sulfide lead selenide chemical bath deposition cost-effective processes scalability Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999
spellingShingle	heterojunction cadmium sulfide lead selenide chemical bath deposition cost-effective processes scalability Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999 José Antonio Heredia-Cancino Oscar Salcido Ricardo Britto-Hurtado Sayra Guadalupe Ruvalcaba-Manzo Ramón Ochoa-Landín Santos Jesús Castillo CdS/PbSe Heterojunction Made via Chemical Bath Deposition and Ionic Exchange Processes to Develop Low-Cost and Scalable Devices
description	Complete optoelectronic devices present major difficulties to be built by aqueous chemical deposition. In this work, a ITO/CdS/PbSe heterostructure was developed, depositing CdS over an ITO-coated substrate via a chemical bath deposition (CBD) technique. The next step involved the growth of a plumbonacrite film over CdS via CBD, where the film acted as a precursor film to be converted to PbSe via ion exchange. The characterization of each material involved in the heterostructure were as follows: the CdS thin films presented a hexagonal crystalline structure and bandgap of 2.42 eV; PbSe had a cubic structure and a bandgap of 0.34 eV. I vs. V measurements allowed the observation of the electrical behavior, which showed a change from an ohmic to diode response by applying a thermal annealing at 150 °C for 5 min. The forward bias of the diode response was in the order of 0.8 V, and the current-voltage characteristics were analyzed by using the modified Shockley model, obtaining an ideality factor of 2.47, being similar to a Schottky diode. Therefore, the reported process to synthesize an ITO/CdS/PbSe heterostructure by aqueous chemical methods was successful and could be used to develop optoelectronic devices.
format	article
author	José Antonio Heredia-Cancino Oscar Salcido Ricardo Britto-Hurtado Sayra Guadalupe Ruvalcaba-Manzo Ramón Ochoa-Landín Santos Jesús Castillo
author_facet	José Antonio Heredia-Cancino Oscar Salcido Ricardo Britto-Hurtado Sayra Guadalupe Ruvalcaba-Manzo Ramón Ochoa-Landín Santos Jesús Castillo
author_sort	José Antonio Heredia-Cancino
title	CdS/PbSe Heterojunction Made via Chemical Bath Deposition and Ionic Exchange Processes to Develop Low-Cost and Scalable Devices
title_short	CdS/PbSe Heterojunction Made via Chemical Bath Deposition and Ionic Exchange Processes to Develop Low-Cost and Scalable Devices
title_full	CdS/PbSe Heterojunction Made via Chemical Bath Deposition and Ionic Exchange Processes to Develop Low-Cost and Scalable Devices
title_fullStr	CdS/PbSe Heterojunction Made via Chemical Bath Deposition and Ionic Exchange Processes to Develop Low-Cost and Scalable Devices
title_full_unstemmed	CdS/PbSe Heterojunction Made via Chemical Bath Deposition and Ionic Exchange Processes to Develop Low-Cost and Scalable Devices
title_sort	cds/pbse heterojunction made via chemical bath deposition and ionic exchange processes to develop low-cost and scalable devices
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/fd5c5390b4c94b418d6a3ced8399f4aa
work_keys_str_mv	AT joseantonioherediacancino cdspbseheterojunctionmadeviachemicalbathdepositionandionicexchangeprocessestodeveloplowcostandscalabledevices AT oscarsalcido cdspbseheterojunctionmadeviachemicalbathdepositionandionicexchangeprocessestodeveloplowcostandscalabledevices AT ricardobrittohurtado cdspbseheterojunctionmadeviachemicalbathdepositionandionicexchangeprocessestodeveloplowcostandscalabledevices AT sayraguadaluperuvalcabamanzo cdspbseheterojunctionmadeviachemicalbathdepositionandionicexchangeprocessestodeveloplowcostandscalabledevices AT ramonochoalandin cdspbseheterojunctionmadeviachemicalbathdepositionandionicexchangeprocessestodeveloplowcostandscalabledevices AT santosjesuscastillo cdspbseheterojunctionmadeviachemicalbathdepositionandionicexchangeprocessestodeveloplowcostandscalabledevices
_version_	1718413115245199360

CdS/PbSe Heterojunction Made via Chemical Bath Deposition and Ionic Exchange Processes to Develop Low-Cost and Scalable Devices

Ejemplares similares