Bending strain engineering in quantum spin hall system for controlling spin currents
Strain engineering alters the topological properties of quantum spin Hall insulators, leading to potential applications in spintronics. Here the authors demonstrate that bending strain can be used to tune the spin transport properties and generate a non-zero spin current in curved in Bi/Cl/Si nanofi...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/fdd4ccfb70d64151839b9498b778dce4 |
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| Sumario: | Strain engineering alters the topological properties of quantum spin Hall insulators, leading to potential applications in spintronics. Here the authors demonstrate that bending strain can be used to tune the spin transport properties and generate a non-zero spin current in curved in Bi/Cl/Si nanofilms. |
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