Bending strain engineering in quantum spin hall system for controlling spin currents

Strain engineering alters the topological properties of quantum spin Hall insulators, leading to potential applications in spintronics. Here the authors demonstrate that bending strain can be used to tune the spin transport properties and generate a non-zero spin current in curved in Bi/Cl/Si nanofi...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Bing Huang, Kyung-Hwan Jin, Bin Cui, Feng Zhai, Jiawei Mei, Feng Liu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Q
Acceso en línea:https://doaj.org/article/fdd4ccfb70d64151839b9498b778dce4
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:fdd4ccfb70d64151839b9498b778dce4
record_format dspace
spelling oai:doaj.org-article:fdd4ccfb70d64151839b9498b778dce42021-12-02T17:06:23ZBending strain engineering in quantum spin hall system for controlling spin currents10.1038/ncomms158502041-1723https://doaj.org/article/fdd4ccfb70d64151839b9498b778dce42017-06-01T00:00:00Zhttps://doi.org/10.1038/ncomms15850https://doaj.org/toc/2041-1723Strain engineering alters the topological properties of quantum spin Hall insulators, leading to potential applications in spintronics. Here the authors demonstrate that bending strain can be used to tune the spin transport properties and generate a non-zero spin current in curved in Bi/Cl/Si nanofilms.Bing HuangKyung-Hwan JinBin CuiFeng ZhaiJiawei MeiFeng LiuNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Bing Huang
Kyung-Hwan Jin
Bin Cui
Feng Zhai
Jiawei Mei
Feng Liu
Bending strain engineering in quantum spin hall system for controlling spin currents
description Strain engineering alters the topological properties of quantum spin Hall insulators, leading to potential applications in spintronics. Here the authors demonstrate that bending strain can be used to tune the spin transport properties and generate a non-zero spin current in curved in Bi/Cl/Si nanofilms.
format article
author Bing Huang
Kyung-Hwan Jin
Bin Cui
Feng Zhai
Jiawei Mei
Feng Liu
author_facet Bing Huang
Kyung-Hwan Jin
Bin Cui
Feng Zhai
Jiawei Mei
Feng Liu
author_sort Bing Huang
title Bending strain engineering in quantum spin hall system for controlling spin currents
title_short Bending strain engineering in quantum spin hall system for controlling spin currents
title_full Bending strain engineering in quantum spin hall system for controlling spin currents
title_fullStr Bending strain engineering in quantum spin hall system for controlling spin currents
title_full_unstemmed Bending strain engineering in quantum spin hall system for controlling spin currents
title_sort bending strain engineering in quantum spin hall system for controlling spin currents
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/fdd4ccfb70d64151839b9498b778dce4
work_keys_str_mv AT binghuang bendingstrainengineeringinquantumspinhallsystemforcontrollingspincurrents
AT kyunghwanjin bendingstrainengineeringinquantumspinhallsystemforcontrollingspincurrents
AT bincui bendingstrainengineeringinquantumspinhallsystemforcontrollingspincurrents
AT fengzhai bendingstrainengineeringinquantumspinhallsystemforcontrollingspincurrents
AT jiaweimei bendingstrainengineeringinquantumspinhallsystemforcontrollingspincurrents
AT fengliu bendingstrainengineeringinquantumspinhallsystemforcontrollingspincurrents
_version_ 1718381653580054528