Reliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique

Like the widely-used semiconductor switch, Insulated Gate Bipolar Transistors (IGBTs) are subject to many failures and degradation in power electronic converters. In Short Circuit Fault (SCF), as the most reported failures in IGBTs, drastic, sudden temperature rise, and peak SCF current are widespre...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Sadegh Mohsenzade, Javad Naghibi, Kamyar Mehran
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	IGBTs reliability protection short circuit fault Technology T
Acceso en línea:	https://doaj.org/article/fe1c37987a704d38b141f6cb54e8855a
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:fe1c37987a704d38b141f6cb54e8855a
record_format	dspace
spelling	oai:doaj.org-article:fe1c37987a704d38b141f6cb54e8855a2021-11-11T16:06:50ZReliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique10.3390/en142173971996-1073https://doaj.org/article/fe1c37987a704d38b141f6cb54e8855a2021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1073/14/21/7397https://doaj.org/toc/1996-1073Like the widely-used semiconductor switch, Insulated Gate Bipolar Transistors (IGBTs) are subject to many failures and degradation in power electronic converters. In Short Circuit Fault (SCF), as the most reported failures in IGBTs, drastic, sudden temperature rise, and peak SCF current are widespread failures owing to a relatively long delay of the protection subsystem. This paper proposes a protection strategy to limit the junction temperature rise by limiting the SCF current by adding a small value resistor in the IGBT emitter. Second, it reduces the SCF current to a value much less than the saturated current. With the proposed control approach, sudden temperature rise during SCF is controlled, preventing significant failure in IGBTs. The extension of the permissible SCF time is achieved even for the cases with temporary arcs. A simple control loop activates in the SCF condition and does not create slow transients for the IGBT. The results of this paper are validated through simulation and experiment.Sadegh MohsenzadeJavad NaghibiKamyar MehranMDPI AGarticleIGBTsreliabilityprotectionshort circuit faultTechnologyTENEnergies, Vol 14, Iss 7397, p 7397 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	IGBTs reliability protection short circuit fault Technology T
spellingShingle	IGBTs reliability protection short circuit fault Technology T Sadegh Mohsenzade Javad Naghibi Kamyar Mehran Reliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique
description	Like the widely-used semiconductor switch, Insulated Gate Bipolar Transistors (IGBTs) are subject to many failures and degradation in power electronic converters. In Short Circuit Fault (SCF), as the most reported failures in IGBTs, drastic, sudden temperature rise, and peak SCF current are widespread failures owing to a relatively long delay of the protection subsystem. This paper proposes a protection strategy to limit the junction temperature rise by limiting the SCF current by adding a small value resistor in the IGBT emitter. Second, it reduces the SCF current to a value much less than the saturated current. With the proposed control approach, sudden temperature rise during SCF is controlled, preventing significant failure in IGBTs. The extension of the permissible SCF time is achieved even for the cases with temporary arcs. A simple control loop activates in the SCF condition and does not create slow transients for the IGBT. The results of this paper are validated through simulation and experiment.
format	article
author	Sadegh Mohsenzade Javad Naghibi Kamyar Mehran
author_facet	Sadegh Mohsenzade Javad Naghibi Kamyar Mehran
author_sort	Sadegh Mohsenzade
title	Reliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique
title_short	Reliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique
title_full	Reliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique
title_fullStr	Reliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique
title_full_unstemmed	Reliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique
title_sort	reliability enhancement of power igbts under short-circuit fault condition using short-circuit current limiting-based technique
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/fe1c37987a704d38b141f6cb54e8855a
work_keys_str_mv	AT sadeghmohsenzade reliabilityenhancementofpowerigbtsundershortcircuitfaultconditionusingshortcircuitcurrentlimitingbasedtechnique AT javadnaghibi reliabilityenhancementofpowerigbtsundershortcircuitfaultconditionusingshortcircuitcurrentlimitingbasedtechnique AT kamyarmehran reliabilityenhancementofpowerigbtsundershortcircuitfaultconditionusingshortcircuitcurrentlimitingbasedtechnique
_version_	1718432453417238528

Reliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique

Ejemplares similares