Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry

Here, the authors report the realization of an active pixel image sensor array composed by 64 pairs of switching transistors and phototransistors, based on wafer-scale bilayer MoS2. The device exhibits sensitive photoresponse under RGB light illumination, showing the potential of 2D MoS2 for image s...

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Autores principales: Seongin Hong, Nicolò Zagni, Sooho Choo, Na Liu, Seungho Baek, Arindam Bala, Hocheon Yoo, Byung Ha Kang, Hyun Jae Kim, Hyung Joong Yun, Muhammad Ashraful Alam, Sunkook Kim
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Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/feb422413d114fd89f94a12eb04f39da
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spelling oai:doaj.org-article:feb422413d114fd89f94a12eb04f39da2021-12-02T17:52:09ZHighly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry10.1038/s41467-021-23711-x2041-1723https://doaj.org/article/feb422413d114fd89f94a12eb04f39da2021-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-23711-xhttps://doaj.org/toc/2041-1723Here, the authors report the realization of an active pixel image sensor array composed by 64 pairs of switching transistors and phototransistors, based on wafer-scale bilayer MoS2. The device exhibits sensitive photoresponse under RGB light illumination, showing the potential of 2D MoS2 for image sensing applications.Seongin HongNicolò ZagniSooho ChooNa LiuSeungho BaekArindam BalaHocheon YooByung Ha KangHyun Jae KimHyung Joong YunMuhammad Ashraful AlamSunkook KimNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-11 (2021)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Seongin Hong
Nicolò Zagni
Sooho Choo
Na Liu
Seungho Baek
Arindam Bala
Hocheon Yoo
Byung Ha Kang
Hyun Jae Kim
Hyung Joong Yun
Muhammad Ashraful Alam
Sunkook Kim
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry
description Here, the authors report the realization of an active pixel image sensor array composed by 64 pairs of switching transistors and phototransistors, based on wafer-scale bilayer MoS2. The device exhibits sensitive photoresponse under RGB light illumination, showing the potential of 2D MoS2 for image sensing applications.
format article
author Seongin Hong
Nicolò Zagni
Sooho Choo
Na Liu
Seungho Baek
Arindam Bala
Hocheon Yoo
Byung Ha Kang
Hyun Jae Kim
Hyung Joong Yun
Muhammad Ashraful Alam
Sunkook Kim
author_facet Seongin Hong
Nicolò Zagni
Sooho Choo
Na Liu
Seungho Baek
Arindam Bala
Hocheon Yoo
Byung Ha Kang
Hyun Jae Kim
Hyung Joong Yun
Muhammad Ashraful Alam
Sunkook Kim
author_sort Seongin Hong
title Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry
title_short Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry
title_full Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry
title_fullStr Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry
title_full_unstemmed Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry
title_sort highly sensitive active pixel image sensor array driven by large-area bilayer mos2 transistor circuitry
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/feb422413d114fd89f94a12eb04f39da
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