Structural Properties and Sensing Performance of CeYxOy Sensing Films for Electrolyte–Insulator–Semiconductor pH Sensors

Abstract In this study we developed CeY x O y sensing membranes displaying super-Nernstian pH-sensitivity for use in electrolyte–insulator–semiconductor (EIS) pH sensors. We examined the effect of thermal annealing on the structural properties and sensing characteristics of the CeY x O y sensing mem...

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Autores principales:	Tung-Ming Pan, Chih-Wei Wang, Ching-Yi Chen
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/ff467dd0d7a04bb1bc2570b75cf5e607
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spelling	oai:doaj.org-article:ff467dd0d7a04bb1bc2570b75cf5e6072021-12-02T15:05:05ZStructural Properties and Sensing Performance of CeYxOy Sensing Films for Electrolyte–Insulator–Semiconductor pH Sensors10.1038/s41598-017-03209-72045-2322https://doaj.org/article/ff467dd0d7a04bb1bc2570b75cf5e6072017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-03209-7https://doaj.org/toc/2045-2322Abstract In this study we developed CeY x O y sensing membranes displaying super-Nernstian pH-sensitivity for use in electrolyte–insulator–semiconductor (EIS) pH sensors. We examined the effect of thermal annealing on the structural properties and sensing characteristics of the CeY x O y sensing membranes deposited through reactive co-sputtering onto Si substrates. X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy revealed the structural, morphological, and chemical features, respectively, of the CeY x O y films after their annealing at 600–900 °C. Among the tested systems, the CeY x O y EIS device prepared with annealing at 800 °C exhibited the highest sensitivity (78.15 mV/pH), the lowest hysteresis voltage (1.4 mV), and the lowest drift rate (0.85 mV/h). Presumably, these annealing conditions optimized the stoichiometry of (CeY)O2 in the film and its surface roughness while suppressing silicate formation at the CeY x O y –Si interface. We attribute the super-Nernstian pH-sensitivity to the incorporation of Y ions in the Ce framework, thereby decreasing the oxidation state Ce (Ce4+ → Ce3+) and resulting in less than one electron transferred per proton in the redox reaction.Tung-Ming PanChih-Wei WangChing-Yi ChenNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Tung-Ming Pan Chih-Wei Wang Ching-Yi Chen Structural Properties and Sensing Performance of CeYxOy Sensing Films for Electrolyte–Insulator–Semiconductor pH Sensors
description	Abstract In this study we developed CeY x O y sensing membranes displaying super-Nernstian pH-sensitivity for use in electrolyte–insulator–semiconductor (EIS) pH sensors. We examined the effect of thermal annealing on the structural properties and sensing characteristics of the CeY x O y sensing membranes deposited through reactive co-sputtering onto Si substrates. X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy revealed the structural, morphological, and chemical features, respectively, of the CeY x O y films after their annealing at 600–900 °C. Among the tested systems, the CeY x O y EIS device prepared with annealing at 800 °C exhibited the highest sensitivity (78.15 mV/pH), the lowest hysteresis voltage (1.4 mV), and the lowest drift rate (0.85 mV/h). Presumably, these annealing conditions optimized the stoichiometry of (CeY)O2 in the film and its surface roughness while suppressing silicate formation at the CeY x O y –Si interface. We attribute the super-Nernstian pH-sensitivity to the incorporation of Y ions in the Ce framework, thereby decreasing the oxidation state Ce (Ce4+ → Ce3+) and resulting in less than one electron transferred per proton in the redox reaction.
format	article
author	Tung-Ming Pan Chih-Wei Wang Ching-Yi Chen
author_facet	Tung-Ming Pan Chih-Wei Wang Ching-Yi Chen
author_sort	Tung-Ming Pan
title	Structural Properties and Sensing Performance of CeYxOy Sensing Films for Electrolyte–Insulator–Semiconductor pH Sensors
title_short	Structural Properties and Sensing Performance of CeYxOy Sensing Films for Electrolyte–Insulator–Semiconductor pH Sensors
title_full	Structural Properties and Sensing Performance of CeYxOy Sensing Films for Electrolyte–Insulator–Semiconductor pH Sensors
title_fullStr	Structural Properties and Sensing Performance of CeYxOy Sensing Films for Electrolyte–Insulator–Semiconductor pH Sensors
title_full_unstemmed	Structural Properties and Sensing Performance of CeYxOy Sensing Films for Electrolyte–Insulator–Semiconductor pH Sensors
title_sort	structural properties and sensing performance of ceyxoy sensing films for electrolyte–insulator–semiconductor ph sensors
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/ff467dd0d7a04bb1bc2570b75cf5e607
work_keys_str_mv	AT tungmingpan structuralpropertiesandsensingperformanceofceyxoysensingfilmsforelectrolyteinsulatorsemiconductorphsensors AT chihweiwang structuralpropertiesandsensingperformanceofceyxoysensingfilmsforelectrolyteinsulatorsemiconductorphsensors AT chingyichen structuralpropertiesandsensingperformanceofceyxoysensingfilmsforelectrolyteinsulatorsemiconductorphsensors
_version_	1718388995269853184

Structural Properties and Sensing Performance of CeYxOy Sensing Films for Electrolyte–Insulator–Semiconductor pH Sensors

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