Preparation and Characterization of Pure SiC Ceramics by HTPVT Induced by Seeding with SiC Nanoarrays
Dense SiC ceramics were fabricated by high-temperature physical vapor transport (HTPVT) growth process using SiC nanoarrays as the crystal seeds, which was obtained by vacuum heat treatment of amorphous SiC films prepared by plasma-enhanced chemical vapor deposition (PECVD) with a porous anodic alum...
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2021
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oai:doaj.org-article:ff6a8a77ab0643f3b3435012522bd7a22021-11-11T17:53:13ZPreparation and Characterization of Pure SiC Ceramics by HTPVT Induced by Seeding with SiC Nanoarrays10.3390/ma142163171996-1944https://doaj.org/article/ff6a8a77ab0643f3b3435012522bd7a22021-10-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/21/6317https://doaj.org/toc/1996-1944Dense SiC ceramics were fabricated by high-temperature physical vapor transport (HTPVT) growth process using SiC nanoarrays as the crystal seeds, which was obtained by vacuum heat treatment of amorphous SiC films prepared by plasma-enhanced chemical vapor deposition (PECVD) with a porous anodic aluminum oxide (AAO) template. In the HTPVT process, two-step holding was adopted, and the temperature at the first step was controlled at 2100 and 2150 °C to avoid SiC nanoarrays evaporation, and the grain size of SiC crystal increased with the increase in temperature and decrease in the pressure of Ar. The temperature of the second step was 2300 °C, and rapid SiC grain growth and gradual densification were achieved. The prepared SiC ceramics exhibited a relative density of more than 99%, an average grain size of about 100 μm, a preferred orientation along the (0 0 0 6) plane, a Vickers hardness of about 29 GPa, a flexural strength of about 360 MPa, and thermal conductivity at room temperature of more than 200 W·m<sup>−1</sup>·K<sup>−1</sup>.Yu-Chen DengNan-Long ZhangQiang ZhiBo WangJian-Feng YangMDPI AGarticlesilicon carbidenanoarraysHTPVTPECVDTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6317, p 6317 (2021) |
| institution |
DOAJ |
| collection |
DOAJ |
| language |
EN |
| topic |
silicon carbide nanoarrays HTPVT PECVD Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 |
| spellingShingle |
silicon carbide nanoarrays HTPVT PECVD Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Yu-Chen Deng Nan-Long Zhang Qiang Zhi Bo Wang Jian-Feng Yang Preparation and Characterization of Pure SiC Ceramics by HTPVT Induced by Seeding with SiC Nanoarrays |
| description |
Dense SiC ceramics were fabricated by high-temperature physical vapor transport (HTPVT) growth process using SiC nanoarrays as the crystal seeds, which was obtained by vacuum heat treatment of amorphous SiC films prepared by plasma-enhanced chemical vapor deposition (PECVD) with a porous anodic aluminum oxide (AAO) template. In the HTPVT process, two-step holding was adopted, and the temperature at the first step was controlled at 2100 and 2150 °C to avoid SiC nanoarrays evaporation, and the grain size of SiC crystal increased with the increase in temperature and decrease in the pressure of Ar. The temperature of the second step was 2300 °C, and rapid SiC grain growth and gradual densification were achieved. The prepared SiC ceramics exhibited a relative density of more than 99%, an average grain size of about 100 μm, a preferred orientation along the (0 0 0 6) plane, a Vickers hardness of about 29 GPa, a flexural strength of about 360 MPa, and thermal conductivity at room temperature of more than 200 W·m<sup>−1</sup>·K<sup>−1</sup>. |
| format |
article |
| author |
Yu-Chen Deng Nan-Long Zhang Qiang Zhi Bo Wang Jian-Feng Yang |
| author_facet |
Yu-Chen Deng Nan-Long Zhang Qiang Zhi Bo Wang Jian-Feng Yang |
| author_sort |
Yu-Chen Deng |
| title |
Preparation and Characterization of Pure SiC Ceramics by HTPVT Induced by Seeding with SiC Nanoarrays |
| title_short |
Preparation and Characterization of Pure SiC Ceramics by HTPVT Induced by Seeding with SiC Nanoarrays |
| title_full |
Preparation and Characterization of Pure SiC Ceramics by HTPVT Induced by Seeding with SiC Nanoarrays |
| title_fullStr |
Preparation and Characterization of Pure SiC Ceramics by HTPVT Induced by Seeding with SiC Nanoarrays |
| title_full_unstemmed |
Preparation and Characterization of Pure SiC Ceramics by HTPVT Induced by Seeding with SiC Nanoarrays |
| title_sort |
preparation and characterization of pure sic ceramics by htpvt induced by seeding with sic nanoarrays |
| publisher |
MDPI AG |
| publishDate |
2021 |
| url |
https://doaj.org/article/ff6a8a77ab0643f3b3435012522bd7a2 |
| work_keys_str_mv |
AT yuchendeng preparationandcharacterizationofpuresicceramicsbyhtpvtinducedbyseedingwithsicnanoarrays AT nanlongzhang preparationandcharacterizationofpuresicceramicsbyhtpvtinducedbyseedingwithsicnanoarrays AT qiangzhi preparationandcharacterizationofpuresicceramicsbyhtpvtinducedbyseedingwithsicnanoarrays AT bowang preparationandcharacterizationofpuresicceramicsbyhtpvtinducedbyseedingwithsicnanoarrays AT jianfengyang preparationandcharacterizationofpuresicceramicsbyhtpvtinducedbyseedingwithsicnanoarrays |
| _version_ |
1718432039406927872 |