Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries

In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain,...

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Autores principales:	Marco A. Giambra, Christian Benz, Fan Wu, Maximillian Thurmer, Geethu Balachandran, Antonio Benfante, Riccardo Pernice, Himadri Pandey, Muraleetharan Boopathi, Min-Ho Jang, Jong-Hyun Ahn, Salvatore Stivala, Enrico Calandra, Claudio Arnone, Pasquale Cusumano, Alessandro Busacca, Wolfram H. P. Pernice, Romain Danneau
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	Graphene metal-oxide graphene field-effect transistors (MOGFETs) microwave transistors clamped geometries meandered graphene contacts Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/ff75c2778bcb467b9c962da0235b7028
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spelling	oai:doaj.org-article:ff75c2778bcb467b9c962da0235b70282021-11-19T00:01:09ZInvestigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries2168-673410.1109/JEDS.2019.2939574https://doaj.org/article/ff75c2778bcb467b9c962da0235b70282019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8825477/https://doaj.org/toc/2168-6734In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.Marco A. GiambraChristian BenzFan WuMaximillian ThurmerGeethu BalachandranAntonio BenfanteRiccardo PerniceHimadri PandeyMuraleetharan BoopathiMin-Ho JangJong-Hyun AhnSalvatore StivalaEnrico CalandraClaudio ArnonePasquale CusumanoAlessandro BusaccaWolfram H. P. PerniceRomain DanneauIEEEarticleGraphenemetal-oxide graphene field-effect transistors (MOGFETs)microwave transistorsclamped geometriesmeandered graphene contactsElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 964-968 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Graphene metal-oxide graphene field-effect transistors (MOGFETs) microwave transistors clamped geometries meandered graphene contacts Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Graphene metal-oxide graphene field-effect transistors (MOGFETs) microwave transistors clamped geometries meandered graphene contacts Electrical engineering. Electronics. Nuclear engineering TK1-9971 Marco A. Giambra Christian Benz Fan Wu Maximillian Thurmer Geethu Balachandran Antonio Benfante Riccardo Pernice Himadri Pandey Muraleetharan Boopathi Min-Ho Jang Jong-Hyun Ahn Salvatore Stivala Enrico Calandra Claudio Arnone Pasquale Cusumano Alessandro Busacca Wolfram H. P. Pernice Romain Danneau Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries
description	In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.
format	article
author	Marco A. Giambra Christian Benz Fan Wu Maximillian Thurmer Geethu Balachandran Antonio Benfante Riccardo Pernice Himadri Pandey Muraleetharan Boopathi Min-Ho Jang Jong-Hyun Ahn Salvatore Stivala Enrico Calandra Claudio Arnone Pasquale Cusumano Alessandro Busacca Wolfram H. P. Pernice Romain Danneau
author_facet	Marco A. Giambra Christian Benz Fan Wu Maximillian Thurmer Geethu Balachandran Antonio Benfante Riccardo Pernice Himadri Pandey Muraleetharan Boopathi Min-Ho Jang Jong-Hyun Ahn Salvatore Stivala Enrico Calandra Claudio Arnone Pasquale Cusumano Alessandro Busacca Wolfram H. P. Pernice Romain Danneau
author_sort	Marco A. Giambra
title	Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries
title_short	Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries
title_full	Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries
title_fullStr	Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries
title_full_unstemmed	Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries
title_sort	investigation on metal–oxide graphene field-effect transistors with clamped geometries
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/ff75c2778bcb467b9c962da0235b7028
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Investigation on Metal&#x2013;Oxide Graphene Field-Effect Transistors With Clamped Geometries

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