Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries

Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries

In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain,...

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Autores principales: Marco A. Giambra, Christian Benz, Fan Wu, Maximillian Thurmer, Geethu Balachandran, Antonio Benfante, Riccardo Pernice, Himadri Pandey, Muraleetharan Boopathi, Min-Ho Jang, Jong-Hyun Ahn, Salvatore Stivala, Enrico Calandra, Claudio Arnone, Pasquale Cusumano, Alessandro Busacca, Wolfram H. P. Pernice, Romain Danneau
Formato: article
Lenguaje:EN
Publicado: IEEE 2019
Materias:
Graphene
metal-oxide graphene field-effect transistors (MOGFETs)
microwave transistors
clamped geometries
meandered graphene contacts
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Acceso en línea:https://doaj.org/article/ff75c2778bcb467b9c962da0235b7028
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