Chen, H., Lee, T., Huang, J., Lee, K., & Wang, Y. (2021). Planarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation. IEEE.
Cita Chicago Style (17a ed.)Chen, Houng-Wei, Tsung-Ying Lee, Jung-Sheng Huang, Kuan-Wei Lee, y Yeong-Her Wang. Planarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation. IEEE, 2021.
Cita MLA (8a ed.)Chen, Houng-Wei, et al. Planarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation. IEEE, 2021.