Mapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials

Abstract This paper describes a new method for direct measurement and evaluation of the inhomogeneous electrostatic vector field with translational symmetry in electro-optic materials exhibiting the Pockels effect. It is based on the evaluation of maximum transmittance of low intensity light passing...

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Autores principales:	Václav Dědič, Tomáš Fridrišek, Jan Franc, Jan Kunc, Martin Rejhon, Utpal N. Roy, Ralph B. James
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/ffb10ca4f74941ef851c03c41c3ca2fa
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id	oai:doaj.org-article:ffb10ca4f74941ef851c03c41c3ca2fa
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spelling	oai:doaj.org-article:ffb10ca4f74941ef851c03c41c3ca2fa2021-12-02T13:57:49ZMapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials10.1038/s41598-021-81338-w2045-2322https://doaj.org/article/ffb10ca4f74941ef851c03c41c3ca2fa2021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-81338-whttps://doaj.org/toc/2045-2322Abstract This paper describes a new method for direct measurement and evaluation of the inhomogeneous electrostatic vector field with translational symmetry in electro-optic materials exhibiting the Pockels effect. It is based on the evaluation of maximum transmittance of low intensity light passing through a sample under a voltage bias. Here, the sample is located between rotating crossed polarizers, and camera images are obtained at each point to determine the electric field. The evaluation procedure is demonstrated using data acquired on a CdZnTeSe quasi-hemispheric semiconductor gamma-ray detector. In addition to CdTe-related compounds, the method can be used for various other materials showing $$\overline{4}3m$$ 4 ¯ 3 m symmetry such as GaAs, CdTe, GaP, 3C-SiC, and ZnS. Furthermore, it can be generalized to other crystalline materials showing the Pockels effect. The method can be used to probe the space charge and the electric field in several kinds of electronic components and devices, as well as provide useful data on the role of defects, contact configurations and other surface and bulk inhomogeneities in the material that can affect the distribution of the internal electric field.Václav DědičTomáš FridrišekJan FrancJan KuncMartin RejhonUtpal N. RoyRalph B. JamesNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Václav Dědič Tomáš Fridrišek Jan Franc Jan Kunc Martin Rejhon Utpal N. Roy Ralph B. James Mapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials
description	Abstract This paper describes a new method for direct measurement and evaluation of the inhomogeneous electrostatic vector field with translational symmetry in electro-optic materials exhibiting the Pockels effect. It is based on the evaluation of maximum transmittance of low intensity light passing through a sample under a voltage bias. Here, the sample is located between rotating crossed polarizers, and camera images are obtained at each point to determine the electric field. The evaluation procedure is demonstrated using data acquired on a CdZnTeSe quasi-hemispheric semiconductor gamma-ray detector. In addition to CdTe-related compounds, the method can be used for various other materials showing $$\overline{4}3m$$ 4 ¯ 3 m symmetry such as GaAs, CdTe, GaP, 3C-SiC, and ZnS. Furthermore, it can be generalized to other crystalline materials showing the Pockels effect. The method can be used to probe the space charge and the electric field in several kinds of electronic components and devices, as well as provide useful data on the role of defects, contact configurations and other surface and bulk inhomogeneities in the material that can affect the distribution of the internal electric field.
format	article
author	Václav Dědič Tomáš Fridrišek Jan Franc Jan Kunc Martin Rejhon Utpal N. Roy Ralph B. James
author_facet	Václav Dědič Tomáš Fridrišek Jan Franc Jan Kunc Martin Rejhon Utpal N. Roy Ralph B. James
author_sort	Václav Dědič
title	Mapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials
title_short	Mapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials
title_full	Mapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials
title_fullStr	Mapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials
title_full_unstemmed	Mapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials
title_sort	mapping of inhomogeneous quasi-3d electrostatic field in electro-optic materials
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/ffb10ca4f74941ef851c03c41c3ca2fa
work_keys_str_mv	AT vaclavdedic mappingofinhomogeneousquasi3delectrostaticfieldinelectroopticmaterials AT tomasfridrisek mappingofinhomogeneousquasi3delectrostaticfieldinelectroopticmaterials AT janfranc mappingofinhomogeneousquasi3delectrostaticfieldinelectroopticmaterials AT jankunc mappingofinhomogeneousquasi3delectrostaticfieldinelectroopticmaterials AT martinrejhon mappingofinhomogeneousquasi3delectrostaticfieldinelectroopticmaterials AT utpalnroy mappingofinhomogeneousquasi3delectrostaticfieldinelectroopticmaterials AT ralphbjames mappingofinhomogeneousquasi3delectrostaticfieldinelectroopticmaterials
_version_	1718392298715217920

Mapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials

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