ELECTRODEPOSITION AND CHARACTERIZATION OF ZnX (X=Se, Te) SEMICONDUCTOR THIN FILMS

In present work we report the one step electrodeposition of ZnX (X = Se y Te) thin films in acid solution. In order to establish the appropriate conditions for the electrodeposition, a voltammetric and photovoltammetric study on different substrates was previously performed. The films were analyzed...

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Autores principales: RIVEROS,G., GÓMEZ,H, HENRÍQUEZ,R., SSHREBLER,R., CÓRDOVA,R., MAROTTI,R. E., DALCHIELE,E.A.
Lenguaje:English
Publicado: Sociedad Chilena de Química 2002
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Acceso en línea:http://www.scielo.cl/scielo.php?script=sci_arttext&pid=S0366-16442002000400013
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spelling oai:scielo:S0366-164420020004000132009-12-18ELECTRODEPOSITION AND CHARACTERIZATION OF ZnX (X=Se, Te) SEMICONDUCTOR THIN FILMSRIVEROS,G.GÓMEZ,HHENRÍQUEZ,R.SSHREBLER,R.CÓRDOVA,R.MAROTTI,R. E.DALCHIELE,E.A. ZnSe ZnTe semiconductors electrodeposition In present work we report the one step electrodeposition of ZnX (X = Se y Te) thin films in acid solution. In order to establish the appropriate conditions for the electrodeposition, a voltammetric and photovoltammetric study on different substrates was previously performed. The films were analyzed by different techniques (SEM, EDS, XRD and optical reflectance). The composition of the ZnTe films was very close to the stoichiometric one, instead, ZnSe films presented a selenium excess that can be eliminated with a proper annealing. Optical reflectance characterization of ZnSe and ZnTe samples grown on titanium gave direct band gaps values of 2.64 eV and 2.27 eV, respectively, in agreement with those reported in the bibliography.info:eu-repo/semantics/openAccessSociedad Chilena de QuímicaBoletín de la Sociedad Chilena de Química v.47 n.4 20022002-12-01text/htmlhttp://www.scielo.cl/scielo.php?script=sci_arttext&pid=S0366-16442002000400013en10.4067/S0366-16442002000400013
institution Scielo Chile
collection Scielo Chile
language English
topic ZnSe
ZnTe
semiconductors
electrodeposition
spellingShingle ZnSe
ZnTe
semiconductors
electrodeposition
RIVEROS,G.
GÓMEZ,H
HENRÍQUEZ,R.
SSHREBLER,R.
CÓRDOVA,R.
MAROTTI,R. E.
DALCHIELE,E.A.
ELECTRODEPOSITION AND CHARACTERIZATION OF ZnX (X=Se, Te) SEMICONDUCTOR THIN FILMS
description In present work we report the one step electrodeposition of ZnX (X = Se y Te) thin films in acid solution. In order to establish the appropriate conditions for the electrodeposition, a voltammetric and photovoltammetric study on different substrates was previously performed. The films were analyzed by different techniques (SEM, EDS, XRD and optical reflectance). The composition of the ZnTe films was very close to the stoichiometric one, instead, ZnSe films presented a selenium excess that can be eliminated with a proper annealing. Optical reflectance characterization of ZnSe and ZnTe samples grown on titanium gave direct band gaps values of 2.64 eV and 2.27 eV, respectively, in agreement with those reported in the bibliography.
author RIVEROS,G.
GÓMEZ,H
HENRÍQUEZ,R.
SSHREBLER,R.
CÓRDOVA,R.
MAROTTI,R. E.
DALCHIELE,E.A.
author_facet RIVEROS,G.
GÓMEZ,H
HENRÍQUEZ,R.
SSHREBLER,R.
CÓRDOVA,R.
MAROTTI,R. E.
DALCHIELE,E.A.
author_sort RIVEROS,G.
title ELECTRODEPOSITION AND CHARACTERIZATION OF ZnX (X=Se, Te) SEMICONDUCTOR THIN FILMS
title_short ELECTRODEPOSITION AND CHARACTERIZATION OF ZnX (X=Se, Te) SEMICONDUCTOR THIN FILMS
title_full ELECTRODEPOSITION AND CHARACTERIZATION OF ZnX (X=Se, Te) SEMICONDUCTOR THIN FILMS
title_fullStr ELECTRODEPOSITION AND CHARACTERIZATION OF ZnX (X=Se, Te) SEMICONDUCTOR THIN FILMS
title_full_unstemmed ELECTRODEPOSITION AND CHARACTERIZATION OF ZnX (X=Se, Te) SEMICONDUCTOR THIN FILMS
title_sort electrodeposition and characterization of znx (x=se, te) semiconductor thin films
publisher Sociedad Chilena de Química
publishDate 2002
url http://www.scielo.cl/scielo.php?script=sci_arttext&pid=S0366-16442002000400013
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