STRUCTURAL AND SEMICONDUCTING PROPERTIES OF ZnTe THIN FILMS GALVANOSTATICALLY GROWN ONTO MONOCRYSTALLINE InP SUBSTRATE FROM TeCL4 /DMSO SOLUTION

ZnTe thin films were galvanostatically electrodeposited onto (100) InP substrates from an electrolytic solution containing TeCl4 dissolved in DMSO. Cyclic voltammetry in the dark was used to identify the process involved in the complex electrochemical reduction of the Te(IV) precursor. Quantitative...

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Autores principales:	GREZ,P, HENRÍQUEZ,R, DALCHIELE,E.A, GÓMEZ,H.
Lenguaje:	English
Publicado:	Sociedad Chilena de Química 2007
Materias:	ZnTe electrodeposition semiconductors
Acceso en línea:	http://www.scielo.cl/scielo.php?script=sci_arttext&pid=S0717-97072007000300012
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spelling	oai:scielo:S0717-970720070003000122007-11-29STRUCTURAL AND SEMICONDUCTING PROPERTIES OF ZnTe THIN FILMS GALVANOSTATICALLY GROWN ONTO MONOCRYSTALLINE InP SUBSTRATE FROM TeCL4 /DMSO SOLUTIONGREZ,PHENRÍQUEZ,RDALCHIELE,E.AGÓMEZ,H. ZnTe electrodeposition semiconductors ZnTe thin films were galvanostatically electrodeposited onto (100) InP substrates from an electrolytic solution containing TeCl4 dissolved in DMSO. Cyclic voltammetry in the dark was used to identify the process involved in the complex electrochemical reduction of the Te(IV) precursor. Quantitative analysis of energy dispersive x-ray analysis results indicated that the composition ratio (Zn:Te) was not possible to determine due the presence of a tellurium excess in the deposits. X-ray diffraction results revealed that the thin films obtained showed a preferred (200) orientation with cubic structure indicating the existence of an epitaxial grow along the (100) crysytalline planes of the InP substrate. The n-type character of the films was deduced from Mott-Schottky plots that also gave a donor density of 1.54 x 10+18 cnr-3. From the optical absortion measurements a bandgap of 2.21 eV was obtainedinfo:eu-repo/semantics/openAccessSociedad Chilena de QuímicaJournal of the Chilean Chemical Society v.52 n.3 20072007-09-01text/htmlhttp://www.scielo.cl/scielo.php?script=sci_arttext&pid=S0717-97072007000300012en10.4067/S0717-97072007000300012
institution	Scielo Chile
collection	Scielo Chile
language	English
topic	ZnTe electrodeposition semiconductors
spellingShingle	ZnTe electrodeposition semiconductors GREZ,P HENRÍQUEZ,R DALCHIELE,E.A GÓMEZ,H. STRUCTURAL AND SEMICONDUCTING PROPERTIES OF ZnTe THIN FILMS GALVANOSTATICALLY GROWN ONTO MONOCRYSTALLINE InP SUBSTRATE FROM TeCL4 /DMSO SOLUTION
description	ZnTe thin films were galvanostatically electrodeposited onto (100) InP substrates from an electrolytic solution containing TeCl4 dissolved in DMSO. Cyclic voltammetry in the dark was used to identify the process involved in the complex electrochemical reduction of the Te(IV) precursor. Quantitative analysis of energy dispersive x-ray analysis results indicated that the composition ratio (Zn:Te) was not possible to determine due the presence of a tellurium excess in the deposits. X-ray diffraction results revealed that the thin films obtained showed a preferred (200) orientation with cubic structure indicating the existence of an epitaxial grow along the (100) crysytalline planes of the InP substrate. The n-type character of the films was deduced from Mott-Schottky plots that also gave a donor density of 1.54 x 10+18 cnr-3. From the optical absortion measurements a bandgap of 2.21 eV was obtained
author	GREZ,P HENRÍQUEZ,R DALCHIELE,E.A GÓMEZ,H.
author_facet	GREZ,P HENRÍQUEZ,R DALCHIELE,E.A GÓMEZ,H.
author_sort	GREZ,P
title	STRUCTURAL AND SEMICONDUCTING PROPERTIES OF ZnTe THIN FILMS GALVANOSTATICALLY GROWN ONTO MONOCRYSTALLINE InP SUBSTRATE FROM TeCL4 /DMSO SOLUTION
title_short	STRUCTURAL AND SEMICONDUCTING PROPERTIES OF ZnTe THIN FILMS GALVANOSTATICALLY GROWN ONTO MONOCRYSTALLINE InP SUBSTRATE FROM TeCL4 /DMSO SOLUTION
title_full	STRUCTURAL AND SEMICONDUCTING PROPERTIES OF ZnTe THIN FILMS GALVANOSTATICALLY GROWN ONTO MONOCRYSTALLINE InP SUBSTRATE FROM TeCL4 /DMSO SOLUTION
title_fullStr	STRUCTURAL AND SEMICONDUCTING PROPERTIES OF ZnTe THIN FILMS GALVANOSTATICALLY GROWN ONTO MONOCRYSTALLINE InP SUBSTRATE FROM TeCL4 /DMSO SOLUTION
title_full_unstemmed	STRUCTURAL AND SEMICONDUCTING PROPERTIES OF ZnTe THIN FILMS GALVANOSTATICALLY GROWN ONTO MONOCRYSTALLINE InP SUBSTRATE FROM TeCL4 /DMSO SOLUTION
title_sort	structural and semiconducting properties of znte thin films galvanostatically grown onto monocrystalline inp substrate from tecl4 /dmso solution
publisher	Sociedad Chilena de Química
publishDate	2007
url	http://www.scielo.cl/scielo.php?script=sci_arttext&pid=S0717-97072007000300012
work_keys_str_mv	AT grezp structuralandsemiconductingpropertiesofzntethinfilmsgalvanostaticallygrownontomonocrystallineinpsubstratefromtecl4dmsosolution AT henriquezr structuralandsemiconductingpropertiesofzntethinfilmsgalvanostaticallygrownontomonocrystallineinpsubstratefromtecl4dmsosolution AT dalchieleea structuralandsemiconductingpropertiesofzntethinfilmsgalvanostaticallygrownontomonocrystallineinpsubstratefromtecl4dmsosolution AT gomezh structuralandsemiconductingpropertiesofzntethinfilmsgalvanostaticallygrownontomonocrystallineinpsubstratefromtecl4dmsosolution
_version_	1718445376170622976

STRUCTURAL AND SEMICONDUCTING PROPERTIES OF ZnTe THIN FILMS GALVANOSTATICALLY GROWN ONTO MONOCRYSTALLINE InP SUBSTRATE FROM TeCL4 /DMSO SOLUTION

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