INFLUENCE OF BATH TEMPERATURE AND PH VALUE ON PROPERTIES OF CHEMICALLY DEPOSITED CU4SNS4 THIN FILMS

Thin films of Cu4SnS4 semiconductors were prepared by chemical bath deposition technique in aqueous solutions. The effects of various bath temperatures (40, 50 and 60 °C) and pH values (pH 0.5, pH 1.0 and pH 1.5) on growth of films were reported. The structure and morphology characteristics of thin...

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Autores principales:	KASSIM,ANUAR, WEE TEE,TAN, SHARIF,ATAN MOHD, ABDULLAH,DZULKEFLY KUANG, HARON,MD. JELAS, MIN,HO SOON, SARAVANAN,NAGALINGAM
Lenguaje:	English
Publicado:	Sociedad Chilena de Química 2009
Materias:	Semiconductor thin films band gap chemical bath deposition
Acceso en línea:	http://www.scielo.cl/scielo.php?script=sci_arttext&pid=S0717-97072009000400004
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spelling	oai:scielo:S0717-970720090004000042010-04-15INFLUENCE OF BATH TEMPERATURE AND PH VALUE ON PROPERTIES OF CHEMICALLY DEPOSITED CU4SNS4 THIN FILMSKASSIM,ANUARWEE TEE,TANSHARIF,ATAN MOHDABDULLAH,DZULKEFLY KUANGHARON,MD. JELASMIN,HO SOONSARAVANAN,NAGALINGAM Semiconductor thin films band gap chemical bath deposition Thin films of Cu4SnS4 semiconductors were prepared by chemical bath deposition technique in aqueous solutions. The effects of various bath temperatures (40, 50 and 60 °C) and pH values (pH 0.5, pH 1.0 and pH 1.5) on growth of films were reported. The structure and morphology characteristics of thin films of Cu4SnS4 grown on indium tin oxide glass substrates were investigated by X-ray diffraction and atomic force microscopy techniques. The optical properties were measured to determine the transition type and band gap value. The thin films produced were found to be polycrystalline with orthorhombic structure. The X-ray diffraction data showed that the most intense peak at 2θ = 30.2° which belongs to (221) plane of Cu4SnS4. The films deposited at 50 °C were found to have the best photoresponse activity and smaller crystal size. At pH 1.5, the film showed well-covered entire substrate surface and the highest absorption values in AFM and optical study, respectively. The best condition to prepare good quality thin films can be carried out at 50 °C with pH 1.5. The bandgap value was found to be 1.4 eV with direct transition.info:eu-repo/semantics/openAccessSociedad Chilena de QuímicaJournal of the Chilean Chemical Society v.54 n.4 20092009-12-01text/htmlhttp://www.scielo.cl/scielo.php?script=sci_arttext&pid=S0717-97072009000400004en10.4067/S0717-97072009000400004
institution	Scielo Chile
collection	Scielo Chile
language	English
topic	Semiconductor thin films band gap chemical bath deposition
spellingShingle	Semiconductor thin films band gap chemical bath deposition KASSIM,ANUAR WEE TEE,TAN SHARIF,ATAN MOHD ABDULLAH,DZULKEFLY KUANG HARON,MD. JELAS MIN,HO SOON SARAVANAN,NAGALINGAM INFLUENCE OF BATH TEMPERATURE AND PH VALUE ON PROPERTIES OF CHEMICALLY DEPOSITED CU4SNS4 THIN FILMS
description	Thin films of Cu4SnS4 semiconductors were prepared by chemical bath deposition technique in aqueous solutions. The effects of various bath temperatures (40, 50 and 60 °C) and pH values (pH 0.5, pH 1.0 and pH 1.5) on growth of films were reported. The structure and morphology characteristics of thin films of Cu4SnS4 grown on indium tin oxide glass substrates were investigated by X-ray diffraction and atomic force microscopy techniques. The optical properties were measured to determine the transition type and band gap value. The thin films produced were found to be polycrystalline with orthorhombic structure. The X-ray diffraction data showed that the most intense peak at 2θ = 30.2° which belongs to (221) plane of Cu4SnS4. The films deposited at 50 °C were found to have the best photoresponse activity and smaller crystal size. At pH 1.5, the film showed well-covered entire substrate surface and the highest absorption values in AFM and optical study, respectively. The best condition to prepare good quality thin films can be carried out at 50 °C with pH 1.5. The bandgap value was found to be 1.4 eV with direct transition.
author	KASSIM,ANUAR WEE TEE,TAN SHARIF,ATAN MOHD ABDULLAH,DZULKEFLY KUANG HARON,MD. JELAS MIN,HO SOON SARAVANAN,NAGALINGAM
author_facet	KASSIM,ANUAR WEE TEE,TAN SHARIF,ATAN MOHD ABDULLAH,DZULKEFLY KUANG HARON,MD. JELAS MIN,HO SOON SARAVANAN,NAGALINGAM
author_sort	KASSIM,ANUAR
title	INFLUENCE OF BATH TEMPERATURE AND PH VALUE ON PROPERTIES OF CHEMICALLY DEPOSITED CU4SNS4 THIN FILMS
title_short	INFLUENCE OF BATH TEMPERATURE AND PH VALUE ON PROPERTIES OF CHEMICALLY DEPOSITED CU4SNS4 THIN FILMS
title_full	INFLUENCE OF BATH TEMPERATURE AND PH VALUE ON PROPERTIES OF CHEMICALLY DEPOSITED CU4SNS4 THIN FILMS
title_fullStr	INFLUENCE OF BATH TEMPERATURE AND PH VALUE ON PROPERTIES OF CHEMICALLY DEPOSITED CU4SNS4 THIN FILMS
title_full_unstemmed	INFLUENCE OF BATH TEMPERATURE AND PH VALUE ON PROPERTIES OF CHEMICALLY DEPOSITED CU4SNS4 THIN FILMS
title_sort	influence of bath temperature and ph value on properties of chemically deposited cu4sns4 thin films
publisher	Sociedad Chilena de Química
publishDate	2009
url	http://www.scielo.cl/scielo.php?script=sci_arttext&pid=S0717-97072009000400004
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INFLUENCE OF BATH TEMPERATURE AND PH VALUE ON PROPERTIES OF CHEMICALLY DEPOSITED CU4SNS4 THIN FILMS

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