Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

par Kai Fu, Houqiang Fu, Xuanqi Huang, Tsung-Han Yang, Chi-Yin Cheng, Prudhvi Ram Peri, Hong Chen, Jossue Montes, Chen Yang, Jingan Zhou, Xuguang Deng, Xin Qi, David J. Smith, Stephen M. Goodnick, Yuji Zhao
Publié 2020

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

par Haitao Zhang, Xuanwu Kang, Yingkui Zheng, Hao Wu, Ke Wei, Xinyu Liu, Tianchun Ye, Zhi Jin
Publié 2021

Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga₂O₃ Schottky Barrier Diode on Sapphire Substrate With Reverse Block...

par Zhuangzhuang Hu, Hong Zhou, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Qian Feng, Jincheng Zhang, Yue Hao
Publié 2018

Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

par Qin Zhou, Honglei Wu, Hui Li, Xi Tang, Zuoyan Qin, Dan Dong, Yan Lin, Chengjin Lu, Ran Qiu, Ruisheng Zheng, Jiannong Wang, Baikui Li
Publié 2019

1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <italic>p-n</italic> Junction Termination

par Ru Xu, Peng Chen, Menghan Liu, Jing Zhou, Yunfei Yang, Yimeng Li, Cheng Ge, Haocheng Peng, Bin Liu, Dunjun Chen, Zili Xie, Rong Zhang, Youdou Zheng
Publié 2020