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Mostrando 301 - 320 Resultados de 461 Para Buscar '"transistor"', tiempo de consulta: 0.04s Limitar resultados
  1. 301
    Multi-frequency sound production and mixing in graphene
    por M. S. Heath, D. W. Horsell
    Publicado 2017
    “... current and modulating its amplitude with a transistor gate. We show that particular sounds are indicators...”
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  2. 302
    Synthesis gas regeneration electrotechnology using volume high-voltage pulsed discharges: corona and barrier ones
    “... with pulsed discharges - corona and barrier ones. Transistor (IGBT) keys are used as energy switches...”
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  3. 303
    Polarity Effect on the Electronic Structure of Molybdenum Dichalcogenides MoXY (X, Y = S, Se): A Computational Study Based on Density-Functional Theory
    “... of semiconductor material for the Spin Field Effect Transistor (SFET) device....”
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  4. 304
    Ferroelectrics Based on HfO<sub>2</sub> Film
    por Chong-Myeong Song, Hyuk-Jun Kwon
    Publicado 2021
    “... treatment processes. By combining ferroelectric materials with field-effect transistors, devices...”
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  5. 305
    Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT
    “... transistor (HEMT) is presented in this paper. The size of an InAs QD is about 30 nm prepared by the S-K...”
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  6. 306
    Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
    “...In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated...”
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  7. 307
    Gate Oxide and Implantation Process Co-Optimization for Low-Power MCU Applications
    “... on the ultra-high Vth (UHVT) transistor and used gate oxide thickness and Vth implantation co-optimization...”
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  8. 308
    Stochastic Thermodynamics of Nonlinear Electronic Circuits: A Realistic Framework for Computing Around kT
    “... includes tunnel junctions, diodes, and MOS transistors in subthreshold operation, among others...”
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  9. 309
    Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges
    por Swarup Deb, Subhabrata Dhar
    Publicado 2021
    “... this fascinating effect, an electrically driven spin-transistor has been proposed....”
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  10. 310
    A Curvature Compensation Technique for Low-Voltage Bandgap Reference
    “... superimposed on the same resistance. We make use of the collector current of the bipolar transistor...”
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  11. 311
    A Low-Energy High-Density Capacitor-Less I&#x0026;F Neuron Circuit Using Feedback FET Co-Integrated With CMOS
    “... fieldeffect transistor (FBFET) and successfully co-integrated FBFET and CMOS in a wafer. By implementing...”
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  12. 312
    Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel
    “...Abstract A charge‐trapping memory (CTM) field effect transistor (FET) featured with an Hf1.5Gd2O6...”
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  13. 313
    Self-selective ferroelectric memory realized with semimetalic graphene channel
    “... graphene layer as the channel material of bottom-gated field effect transistor structure is demonstrated...”
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  14. 314
    Tunable flexible artificial synapses: a new path toward a wearable electronic system
    “...Artificial synapses: memristive transistors with mechanical and synaptic flexibility Mechanically...”
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  15. 315
    Theoretical and Experimental Substractions of Device Temperature Determination Utilizing I-V Characterization Applied on AlGaN/GaN HEMT
    “... of a high-electron-mobility transistor (HEMT). The experimental sections presents theoretical...”
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  16. 316
    Single microtubules and small networks become significantly stiffer on short time-scales upon mechanical stimulation
    “... connections act as transistor-like, angle dependent momentum filters, whereas triangular networks act...”
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  17. 317
    Electric-field-controlled interface dipole modulation for Si-based memory devices
    por Noriyuki Miyata
    Publicado 2018
    “... can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration...”
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  18. 318
    High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time
    “... compelling case for multilayer MoSe2 phototransistors fabricated in a bottom-gate thin-film transistor...”
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  19. 319
    Effects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices
    “.../GaN high electron mobility transistor (HEMT) devices. In the experiment, we prepared the device...”
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  20. 320
    Cryptographic models of nanocommunicaton network using quantum dot cellular automata: A survey
    “...) device as a promising archetype for an alternative to the traditional transistor‐based device. QCA has...”
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