Materias dentro de su búsqueda.
Materias dentro de su búsqueda.
-
321“... is important. In order to meet the specific requirements of low-end Thin Film Transistor-Liquid-Crystal-Display...”
Enlace del recurso
article -
322“... direction towards improvement of PbO technology by incorporation of Frisch grid or X-ray transistor...”
Enlace del recurso
article -
323por Chong-Rong Huang, Hsien-Chin Chiu, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Tien Chen, Kuo-Jen Chang“...In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal...”
Publicado 2021
Enlace del recurso
article -
324“...In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT...”
Enlace del recurso
article -
325por Dennis D. Weller, Michael Hefenbrock, Michael Beigl, Jasmin Aghassi-Hagmann, Mehdi B. Tahoori“... as printed transistor-based activation functions. In addition, we present a learning algorithm developed...”
Publicado 2021
Enlace del recurso
article -
326por G. Pedretti, V. Milo, S. Ambrogio, R. Carboni, S. Bianchi, A. Calderoni, N. Ramaswamy, A. S. Spinelli, D. Ielmini“...-dependent superposition of pre- and post-synaptic spikes within a hybrid one-transistor/one-resistor (1T1R...”
Publicado 2017
Enlace del recurso
article -
327por Finn Zahari, Eduardo Pérez, Mamathamba Kalishettyhalli Mahadevaiah, Hermann Kohlstedt, Christian Wenger, Martin Ziegler“... and massive parallel in-memory computing in biology differs strongly from conventional transistor electronics...”
Publicado 2020
Enlace del recurso
article -
328“...-dependent spatially variant transistor-based phase shifters and amplifiers for the spatial decomposition...”
Enlace del recurso
article -
329“... report on the fabrication of a nanoscale MC receiver based on graphene field-effect transistor biosensors...”
Enlace del recurso
article -
330“... variables and complex internal structures. The fast device‐level insulated gate bipolar transistor (IGBT...”
Enlace del recurso
article -
331Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device applicationpor Chengcheng Xiao, Fang Wang, Yao Wang, Shengyuan A. Yang, Jianzhong Jiang, Ming Yang, Yunhao Lu, Shijie Wang, Yuanping Feng“... investigate the transport characteristics of a field effect transistor based on the proposed heterostructures...”
Publicado 2017
Enlace del recurso
article -
332“... pseudomorphic high-electron-mobility-transistor (GaAs pHEMT). For broadband design, a high gain cascode...”
Enlace del recurso
article -
333“...In this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT...”
Enlace del recurso
article -
334“..., we simulate the integrated response of an ensemble of single-electron transistors (SET) whose...”
Enlace del recurso
article -
335por Jian-Long Xu, Rui-Xuan Dai, Yan Xin, Yi-Lin Sun, Xian Li, Yang-Xin Yu, Lan Xiang, Dan Xie, Sui-Dong Wang, Tian-Ling Ren“...Abstract Single-walled carbon nanotubes (SWCNTs) offer great potential for field-effect transistors...”
Publicado 2017
Enlace del recurso
article -
336por Saeid Asgarnezhad-Zorgabad“... configuration acts as a surface plasmon laser and quantum plasmonic transistor and opens prospects for designing...”
Publicado 2021
Enlace del recurso
article -
337por Chenxuan Fan, Zhiming Chen, Zicheng Liu, Xiao Li, Xiaoran Li, Quanwen Qi, Wei Gu, Xinghua Wang“... directly to the gate of the transistor and this simple control method exhibits good robustness to process...”
Publicado 2021
Enlace del recurso
article -
338por Jianming Lei, Rui Wang, Guo Yang, Jin Wang, Fulong Jiang, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng“... electron mobility transistor (HEMT) power devices. The response time required for the drain voltage to drop...”
Publicado 2019
Enlace del recurso
article -
339por Dong-Hwan Choi, Kyung-Ah Min, Suklyun Hong, Bum-Kyu Kim, Myung-Ho Bae, Ju-Jin Kim“... tunneling spectroscopy in a fashion of field-effect transistor provides feasible and reliable ways...”
Publicado 2021
Enlace del recurso
article -
340“... (EMC) simulations are used to model the behavior of a gate-all-around (GAA) field-effect transistor...”
Enlace del recurso
article