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341Structural evolution and phase transition mechanism of $$\hbox {MoSe}_2$$ MoSe 2 under high pressure“...) with outstanding electronic and optical properties, which is widely used in field-effect transistor (FET). Here...”
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342“... biosensor technologies: magnetoresistive (MR)-based, transistor-based, quartz crystal microbalance (QCM...”
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343Hardware/Software Co-Design for TinyML Voice-Recognition Application on Resource Frugal Edge Devices“... in the microcontroller unit of an edge device. Furthermore, resistor–transistor logic, which perform not only windowing...”
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344por Sang-Hoo Cho, Hanbyeol Jang, Heungsoon Im, Donghyeon Lee, Je-Ho Lee, Kenji Watanabe, Takashi Taniguchi, Maeng-Je Seong, Byoung Hun Lee, Kayoung Lee“... an intermediate gate voltage (V BG) regime where the current hardly changes, working as a ternary transistor...”
Publicado 2021
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345“... interferometry, and high-speed complementary metal-oxide semiconductor transistor camera detection provided...”
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346por Ximing Chen, Xuan Li, Yafei Wang, Hong Chen, Caineng Zhou, Chao Zhang, Chengzhan Li, Xiaochuan Deng, Yudong Wu, Bo Zang“.... In this paper, the effects of Junction Field Effect Transistor (JFET) region width and JFET doping (JD...”
Publicado 2020
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347por Mostafa Rahimi Azghadi, Nicolangelo Iannella, Nicolangelo Iannella, Said Al-Sarawi, Derek Abbott“... that the proposed design is much more stable than its previous counterparts in terms of vulnerability to transistor...”
Publicado 2014
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348“..., and improved Wilson, combined with a field-effect transistor. The undoubted advantages of the proposed...”
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349por Jérôme K. Folla, Maria L. Crespo, Evariste T. Wembe, Mohammad A. S. Bhuiyan, Andres Cicuttin, Bernard Z. Essimbi, Mamun B. I. Reaz“... and the comparison speed of the device. A custom latch structure with rigorous transistor sizing was implemented...”
Publicado 2021
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350por Mei Xian Low, Sruthi Kuriakose, Qian Liu, Patrick D. Taylor, Dashen Dong, Terry Chien-Jen Yang, Taimur Ahmed, Gregory Wilson, Michelle J. S. Spencer, Sherif Abdulkader Tawfik, Sharath Sriram, Madhu Bhaskaran, Prashant Sonar, Sumeet Walia“... the ambipolar field effect transistor characteristics. A highly sensitive, nongated broadband photodetection...”
Publicado 2021
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351“... electromechanical hardware. These pneumatic logic circuits use normally-closed microfluidic valves as transistor...”
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352por Theodor Lundberg, Jing Li, Louis Hutin, Benoit Bertrand, David J. Ibberson, Chang-Min Lee, David J. Niegemann, Matias Urdampilleta, Nadia Stelmashenko, Tristan Meunier, Jason W. A. Robinson, Lisa Ibberson, Maud Vinet, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba“... silicon double quantum dot defined in the corners of a split-gate transistor. Using gate-based...”
Publicado 2020
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353por Balu Balambiga, Ramachandran Dheepika, Paneerselvam Devibala, Predhanekar Mohamed Imran, Samuthira Nagarajan“... transistor was fabricated by employing the active layer of picene (donor, D) and N,N′-di(dodecyl)-perylene...”
Publicado 2020
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354por Zemenu Yohannes Kassa, Zelalem Tenaw, Ayalew Astatkie, Melese Siyoum, Gezahegn Bekele, Kefyalew Taye, Shewangizaw Mekonnen, Zerai Kassaye“... transistor radio and mobile phone have significant effect in improving the knowledge and attitude...”
Publicado 2019
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355por Chih-Lung Lin, Sung-Chun Chen, Ming-Yang Deng, Yuan-Hao Ho, Chieh-An Lin, Chia-Ling Tsai, Wei-Sheng Liao, Chih-I Liu, Chia-En Wu, Jia-Tian Peng“...-formula>) variation in a low-temperature poly-crystalline silicon thin-film transistor (LTPS TFT) and a...”
Publicado 2021
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356por Miao Zhang, Zhiyou Guo, Yong Huang, Yuan Li, Jiancheng Ma, Xiaoyu Xia, Xiuyang Tan, Fan Xia, Huiqing Sun“...A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite...”
Publicado 2021
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357“... properties are very difficult to obtain according to the literature. Based on the oxide thin film transistor...”
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358“... using a high-density multi-transistor array. We measured unimodal conduction velocity distributions (1.3...”
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359por Haiyong Wang, Wei Mao, Shenglei Zhao, Ming Du, Yachao Zhang, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao“...A reverse-blocking AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (RB...”
Publicado 2021
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360por Eric N. Jin, Brian P. Downey, Vikrant J. Gokhale, Jason A. Roussos, Matthew T. Hardy, Tyler A. Growden, Neeraj Nepal, D. Scott Katzer, Jeffrey P. Calame, David J. Meyer“.../GaN/4H-SiC high-electron-mobility transistor structures with compositions ranging from x = 0 to x...”
Publicado 2021
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