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  1. 381
    Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack
    por Xiuyan Li, Akira Toriumi
    Publicado 2020
    “... transistors (FETs) are still controversially discussed. Here the authors propose a model distinct from the NC...”
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  2. 382
    Cross-coupling polycondensation via C–O or C–N bond cleavage
    “... photovoltaic devices, light-emitting diodes and field effect transistors. Here the authors describe...”
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  3. 383
    A FinFET with one atomic layer channel
    “...FinFETs are an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring...”
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  4. 384
    Integrated circuits based on conjugated polymer monolayer
    “...Polymer monolayer field-effect transistors hold promise for faster circuits, but their performance...”
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  5. 385
    Supramolecular networks stabilise and functionalise black phosphorus
    “...Few-layered black phosphorus has been exploited in transistors and other devices, but its poor...”
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  6. 386
    Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
    “...Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack...”
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  7. 387
    Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation
    “...-effect transistors with mobility up to 121 cm2 V−1 s−1....”
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  8. 388
    Revealing quantum effects in highly conductive δ-layer systems
    “...A solution to performance related challenges posed by nanoscale field effect transistors...”
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  9. 389
    Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
    “..., such as TaN thin film resistors and mesa-resistors, capacitors, inductors, and transistors. The developed PDK...”
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  10. 390
    Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals
    “... state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing a...”
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  11. 391
    Nanowire-based electronic and optoelectronic devices
    por Dubcoveţchi, Iurie
    Publicado 2015
    “... applications is given. Nanowire field-effect transistors, nanowire lasers, as well as crossed nanowire...”
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  12. 392
    Embedding delay‐based physical unclonable functions in networks‐on‐chip
    “... switches. Pass transistors, which work as control components, have been added into the delay paths. A 5...”
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  13. 393
    Analog CMOS Readout Channel for Time and Amplitude Measurements With Radiation Sensitivity Analysis for Gain-Boosting Amplifiers
    “... blocks use compact gain-boosting techniques based on quasi-floating gate (QFG) transistors achieving...”
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  14. 394
    A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model
    “...Recently, carbon nanotube field-effect transistors (CNTFETs) have attracted wide attention...”
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  15. 395
    Electronic and electrochemical viral detection for point-of-care use: A systematic review.
    “... spectroscopy, field effect transistors, and similar electrical techniques. Here, we systematically review...”
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  16. 396
    Experimental and molecular dynamics studies of an ultra-fast sequential hydrogen plasma process for fabricating phosphorene-based sensors
    “... directly on silicon substrates followed by the fabrication of field-effect transistors showing the low...”
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  17. 397
    Spin-dependent thermoelectric effects in Fe-C6 doped monolayer MoS2
    por Lin Zhu, Fei Zou, Guoying Gao, Kailun Yao
    Publicado 2017
    “... transistors. These results are useful in future MoS2-based multifunctional spin caloritronic devices....”
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  18. 398
    A New 13-Level Switched-Capacitor Inverter with Reduced Device Count
    “.... The proposed topology comprises fourteen transistors, three capacitors and a single DC source to produce a 13...”
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  19. 399
    Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions
    “..., the proposed bonding method would facilitate next-generation InP devices, such as transistors for high...”
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  20. 400
    Automatic Fault Detection Circuit for Integrated Gate Drivers of Active-Matrix Displays
    “... the circuit operation, it was fabricated with indium gallium zinc oxide thin film transistors process...”
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