Mostrando 381 - 400 Resultados de 461 Para Buscar '"transistor"', tiempo de consulta: 0.20s Limitar resultados
  1. 381
    por Xiuyan Li, Akira Toriumi
    Publicado 2020
    ... transistors (FETs) are still controversially discussed. Here the authors propose a model distinct from the NC...
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  2. 382
    ... photovoltaic devices, light-emitting diodes and field effect transistors. Here the authors describe...
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  3. 383
    ...FinFETs are an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring...
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  4. 384
    ...Polymer monolayer field-effect transistors hold promise for faster circuits, but their performance...
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  5. 385
    ...Few-layered black phosphorus has been exploited in transistors and other devices, but its poor...
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  6. 386
    ...Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack...
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  7. 387
  8. 388
    ...A solution to performance related challenges posed by nanoscale field effect transistors...
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  9. 389
    ..., such as TaN thin film resistors and mesa-resistors, capacitors, inductors, and transistors. The developed PDK...
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  10. 390
  11. 391
    por Dubcoveţchi, Iurie
    Publicado 2015
    ... applications is given. Nanowire field-effect transistors, nanowire lasers, as well as crossed nanowire...
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  12. 392
    ... switches. Pass transistors, which work as control components, have been added into the delay paths. A 5...
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  13. 393
    ... blocks use compact gain-boosting techniques based on quasi-floating gate (QFG) transistors achieving...
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  14. 394
  15. 395
    ... spectroscopy, field effect transistors, and similar electrical techniques. Here, we systematically review...
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  16. 396
  17. 397
    por Lin Zhu, Fei Zou, Guoying Gao, Kailun Yao
    Publicado 2017
    ... transistors. These results are useful in future MoS2-based multifunctional spin caloritronic devices....
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  18. 398
    .... The proposed topology comprises fourteen transistors, three capacitors and a single DC source to produce a 13...
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  19. 399
    ..., the proposed bonding method would facilitate next-generation InP devices, such as transistors for high...
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  20. 400
    ... the circuit operation, it was fabricated with indium gallium zinc oxide thin film transistors process...
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