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401por O. Rubel“..., with high-electron-mobility transistors being a prominent example. A heterojunction of two materials...”
Publicado 2017
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402Magnetic anisotropy control by applying an electric field to the side surface of ferromagnetic films“... of vertical spin field-effect transistors with widths as large as ~500 nm by applying an electric field...”
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403por Christian Michael Siket, Nadine Tillner, Andrei Ionut Mardare, Amir Reuveny, Carina Daniela Grill, Florian Hartmann, Gerald Kettlgruber, Richard Moser, Jan Philipp Kollender, Takao Someya, Achim Walter Hassel, Martin Kaltenbrunner, Siegfried Bauer“... the versatility of the on-site anodization methods by fabricating oxides-based resistors, diodes, transistors...”
Publicado 2018
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404por Minhyun Jung, Eunha Lee, Dongseuk Kim, Kyungkwan Kim, Changjin Yun, Hyangsook Lee, Heegoo Kim, Kungwon Rhie, Sanghun Jeon“... and photosensors when integrated with In-Zn-O thin film transistors. This highly versatile and high performance...”
Publicado 2019
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405“...Like the widely-used semiconductor switch, Insulated Gate Bipolar Transistors (IGBTs) are subject...”
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406“...Integration of diamond with GaN-based high-electron-mobility transistors improves thermal...”
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407por Fakun Wang, Sijie Yang, Jie Wu, Xiaozong Hu, Yuan Li, Huiqiao Li, Xitao Liu, Junhua Luo, Tianyou Zhai“.... Furthermore, we elaborate on their device applications including transistors, artificial synapses, optical...”
Publicado 2021
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408“... on graphene transport. Arrays of graphene field effect transistors were fabricated on 2” BN/sapphire...”
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409“...Abstract Graphene field effect transistors are becoming an integral part of advanced devices. Hence...”
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410por Seungyeop Choi, Woosung Jo, Yongmin Jeon, Seonil Kwon, Jeong Hyun Kwon, Young Hyun Son, Junmo Kim, Jun Hong Park, Hyuncheol Kim, Ho Seung Lee, Minwoo Nam, Eun Gyo Jeong, Jeong Bin Shin, Taek-Soo Kim, Kyung Cheol Choi“... platform. Here, organic light-emitting diodes (OLEDs) with red, green and blue color, thin film transistors...”
Publicado 2020
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411por Chung Won Lee, Jun Min Suh, Seokhoon Choi, Sang Eon Jun, Tae Hyung Lee, Jin Wook Yang, Sol A Lee, Bo Reum Lee, Donghyeon Yoo, Soo Young Kim, Dong Sung Kim, Ho Won Jang“... for the realization of the electronic tongue. Solution-gated field-effect transistors (SFETs) with high sensitivity...”
Publicado 2021
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412por James Semple, Dimitra G. Georgiadou, Gwenhivir Wyatt-Moon, Minho Yoon, Akmaral Seitkhan, Emre Yengel, Stephan Rossbauer, Francesca Bottacchi, Martyn A. McLachlan, Donal D. C. Bradley, Thomas D. Anthopoulos“... relevant, included self-aligned-gate transistors, radio frequency diodes and rectifying circuits, multi...”
Publicado 2018
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413por A. V. Greshilova“... is restricted to a specific time frame, while “Kys’” can be considered rather as transistorizes system...”
Publicado 2017
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414por Chun Wang, Yu-Chiao Chen, Heng-Tung Hsu, Yi-Fan Tsao, Yueh-Chin Lin, Chang-Fu Dee, Edward-Yi Chang“... (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) intended...”
Publicado 2021
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415“... electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN...”
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416“... contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. Both the junction...”
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417“.... However, for a suitable integration in active devices such as p-n junctions, transistors or optoelectronic...”
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418“... análisis energético para cada uno de los estados de los transistores bipolares de puerta aislada (IGBT) y...”
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419“... (semiconductors, single electrons transistors), non-linear optic devices, photo-electrochemistry to biomedicine...”
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420por Mu Wen Chuan, Kien Liong Wong, Munawar Agus Riyadi, Afiq Hamzah, Shahrizal Rusli, Nurul Ezaila Alias, Cheng Siong Lim, Michael Loong Peng Tan“... models for p-type and n-type uniformly doped silicene field-effect transistors (FETs). The current...”
Publicado 2021
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