Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures

por Wing H. Ng, Yao Lu, Huiyun Liu, Claire J. Carmalt, Ivan P. Parkin, Anthony J. Kenyon
Publicado 2018

A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices

por Horatio R. J. Cox, Mark Buckwell, Wing H. Ng, Daniel J. Mannion, Adnan Mehonic, Paul R. Shearing, Sarah Fearn, Anthony J. Kenyon
Publicado 2021