Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]

por Li-E. Cai, Chao-Zhi Xu, Fei-Bing Xiong, Ming-Jie Zhao, Hai-Feng Lin, Hong-Yi Lin, Dong Sun
Publicado 2021