Engineered Mott ground state in a LaTiO3+δ/LaNiO3 heterostructure

por Yanwei Cao, Xiaoran Liu, M. Kareev, D. Choudhury, S. Middey, D. Meyers, J.-W. Kim, P. J. Ryan, J.W. Freeland, J. Chakhalian
Publicado 2016

Anomalous magnetoresistance due to longitudinal spin fluctuations in a J eff = 1/2 Mott semiconductor

por Lin Hao, Zhentao Wang, Junyi Yang, D. Meyers, Joshua Sanchez, Gilberto Fabbris, Yongseong Choi, Jong-Woo Kim, Daniel Haskel, Philip J. Ryan, Kipton Barros, Jiun-Haw Chu, M. P. M. Dean, Cristian D. Batista, Jian Liu
Publicado 2019

Artificial two-dimensional polar metal at room temperature

por Yanwei Cao, Zhen Wang, Se Young Park, Yakun Yuan, Xiaoran Liu, Sergey M. Nikitin, Hirofumi Akamatsu, M. Kareev, S. Middey, D. Meyers, P. Thompson, P. J. Ryan, Padraic Shafer, A. N’Diaye, E. Arenholz, Venkatraman Gopalan, Yimei Zhu, Karin M. Rabe, J. Chakhalian
Publicado 2018