Engineered Mott ground state in a LaTiO3+δ/LaNiO3 heterostructure

par Yanwei Cao, Xiaoran Liu, M. Kareev, D. Choudhury, S. Middey, D. Meyers, J.-W. Kim, P. J. Ryan, J.W. Freeland, J. Chakhalian
Publié 2016

Anomalous magnetoresistance due to longitudinal spin fluctuations in a J eff = 1/2 Mott semiconductor

par Lin Hao, Zhentao Wang, Junyi Yang, D. Meyers, Joshua Sanchez, Gilberto Fabbris, Yongseong Choi, Jong-Woo Kim, Daniel Haskel, Philip J. Ryan, Kipton Barros, Jiun-Haw Chu, M. P. M. Dean, Cristian D. Batista, Jian Liu
Publié 2019

Artificial two-dimensional polar metal at room temperature

par Yanwei Cao, Zhen Wang, Se Young Park, Yakun Yuan, Xiaoran Liu, Sergey M. Nikitin, Hirofumi Akamatsu, M. Kareev, S. Middey, D. Meyers, P. Thompson, P. J. Ryan, Padraic Shafer, A. N’Diaye, E. Arenholz, Venkatraman Gopalan, Yimei Zhu, Karin M. Rabe, J. Chakhalian
Publié 2018