Unfolding the physics of URu2Si2 through silicon to phosphorus substitution

por A. Gallagher, K.-W. Chen, C. M. Moir, S. K. Cary, F. Kametani, N. Kikugawa, D. Graf, T. E. Albrecht-Schmitt, S. C. Riggs, A. Shekhter, R. E. Baumbach
Publicado 2016

J e (4.2 K, 31.2 T) beyond 1 kA/mm2 of a ~3.2 μm thick, 20 mol% Zr-added MOCVD REBCO coated conductor

por A. Xu, Y. Zhang, M. Heydari Gharahcheshmeh, Y. Yao, E. Galstyan, D. Abraimov, F. Kametani, A. Polyanskii, J. Jaroszynski, V. Griffin, G. Majkic, D. C. Larbalestier, V. Selvamanickam
Publicado 2017