Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

por Youcef A. Bioud, Abderraouf Boucherif, Maksym Myronov, Ali Soltani, Gilles Patriarche, Nadi Braidy, Mourad Jellite, Dominique Drouin, Richard Arès
Publicado 2019

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

por Xin Li, Matthew B. Jordan, Taha Ayari, Suresh Sundaram, Youssef El Gmili, Saiful Alam, Muhbub Alam, Gilles Patriarche, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden
Publicado 2017

Quantum cascade lasers grown on silicon

por Hoang Nguyen-Van, Alexei N. Baranov, Zeineb Loghmari, Laurent Cerutti, Jean-Baptiste Rodriguez, Julie Tournet, Gregoire Narcy, Guilhem Boissier, Gilles Patriarche, Michael Bahriz, Eric Tournié, Roland Teissier
Publicado 2018

Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF₄ Based Process Conditions

por Mario Moreno, Arturo Ponce, Arturo Galindo, Eduardo Ortega, Alfredo Morales, Javier Flores, Roberto Ambrosio, Alfonso Torres, Luis Hernandez, Hector Vazquez-Leal, Gilles Patriarche, Pere Roca i Cabarrocas
Publicado 2021

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

por Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, Ashutosh Srivastava, Rajat Gujrati, Ali Ahaitouf, Gilles Patriarche, Thierry Leichlé, Simon Gautier, Tarik Moudakir, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden
Publicado 2020

GeSnOI mid-infrared laser technology

por Binbin Wang, Emilie Sakat, Etienne Herth, Maksym Gromovyi, Andjelika Bjelajac, Julien Chaste, Gilles Patriarche, Philippe Boucaud, Frédéric Boeuf, Nicolas Pauc, Vincent Calvo, Jérémie Chrétien, Marvin Frauenrath, Alexei Chelnokov, Vincent Reboud, Jean-Michel Hartmann, Moustafa El Kurdi
Publicado 2021