Material-Device-Circuit Co-optimization of 2D Material based FETs for Ultra-Scaled Technology Nodes

por Tarun kumar Agarwal, Bart Soree, Iuliana Radu, Praveen Raghavan, Giuseppe Iannaccone, Gianluca Fiori, Wim Dehaene, Marc Heyns
Publicado 2017

Impact of device scaling on the electrical properties of MoS2 field-effect transistors

por Goutham Arutchelvan, Quentin Smets, Devin Verreck, Zubair Ahmed, Abhinav Gaur, Surajit Sutar, Julien Jussot, Benjamin Groven, Marc Heyns, Dennis Lin, Inge Asselberghs, Iuliana Radu
Publicado 2021