Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor

par Jangyup Son, Soogil Lee, Sang Jin Kim, Byung Cheol Park, Han-Koo Lee, Sanghoon Kim, Jae Hoon Kim, Byung Hee Hong, Jongill Hong
Publié 2016

Evolution of defect formation during atomically precise desulfurization of monolayer MoS2

par Jong-Young Lee, Jong Hun Kim, Yeonjoon Jung, June Chul Shin, Yangjin Lee, Kwanpyo Kim, Namwon Kim, Arend M. van der Zande, Jangyup Son, Gwan-Hyoung Lee
Publié 2021

Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

par Jangyup Son, Junyoung Kwon, SunPhil Kim, Yinchuan Lv, Jaehyung Yu, Jong-Young Lee, Huije Ryu, Kenji Watanabe, Takashi Taniguchi, Rita Garrido-Menacho, Nadya Mason, Elif Ertekin, Pinshane Y. Huang, Gwan-Hyoung Lee, Arend M. van der Zande
Publié 2018

Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

par Jangyup Son, Junyoung Kwon, SunPhil Kim, Yinchuan Lv, Jaehyung Yu, Jong-Young Lee, Huije Ryu, Kenji Watanabe, Takashi Taniguchi, Rita Garrido-Menacho, Nadya Mason, Elif Ertekin, Pinshane Y. Huang, Gwan-Hyoung Lee, Arend M. van der Zande
Publié 2018