Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine

por Caroline E. Reilly, Nirupam Hatui, Thomas E. Mates, Pratik Koirala, Adedapo A. Oni, Shuji Nakamura, Steven P. DenBaars, Stacia Keller
Publicado 2021

InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

por Ryan C. White, Hongjian Li, Michel Khoury, Cheyenne Lynsky, Michael Iza, Stacia Keller, David Sotta, Shuji Nakamura, Steven P. DenBaars
Publicado 2021