Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine

par Caroline E. Reilly, Nirupam Hatui, Thomas E. Mates, Pratik Koirala, Adedapo A. Oni, Shuji Nakamura, Steven P. DenBaars, Stacia Keller
Publié 2021

InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

par Ryan C. White, Hongjian Li, Michel Khoury, Cheyenne Lynsky, Michael Iza, Stacia Keller, David Sotta, Shuji Nakamura, Steven P. DenBaars
Publié 2021

Light-emitting metalenses and meta-axicons for focusing and beaming of spontaneous emission

par Yahya Mohtashami, Ryan A. DeCrescent, Larry K. Heki, Prasad P. Iyer, Nikita A. Butakov, Matthew S. Wong, Abdullah Alhassan, William J. Mitchell, Shuji Nakamura, Steven P. DenBaars, Jon. A. Schuller
Publié 2021