Analysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure

por Peng-lin Wang, Hui-qing Sun, Xiao Ding, Zhi-hui Huang, Yuan Li, Fan Xia, Xiao-yu Xia, Miao Zhang, Jian-cheng Ma, Xiu-yang Tan, Liang Xu, Zhi-you Guo
Publicado 2021