Effect of Bonding Strength on Electromigration Failure in Cu–Cu Bumps

In microelectronic packaging technology for three-dimensional integrated circuits (3D ICs), Cu-to-Cu direct bonding appears to be the solution to solve the problems of Joule heating and electromigration (EM) in solder microbumps under 10 <inline-formula><math xmlns="http://www.w3.org/1...

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Enregistré dans:
Détails bibliographiques
Auteurs principaux: Kai-Cheng Shie, Po-Ning Hsu, Yu-Jin Li, K. N. Tu, Chih Chen
Format: article
Langue:EN
Publié: MDPI AG 2021
Sujets:
T
Accès en ligne:https://doaj.org/article/001536b276f041919c682d97487e8dc0
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