APA (7th ed.) Citation

Khediri, A., Talbi, A., Jaouad, A., Maher, H., & Soltani, A. (2021). Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT. MDPI AG.

Chicago Style (17th ed.) Citation

Khediri, Abdelkrim, Abbasia Talbi, Abdelatif Jaouad, Hassan Maher, and Ali Soltani. Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT. MDPI AG, 2021.

MLA (8th ed.) Citation

Khediri, Abdelkrim, et al. Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT. MDPI AG, 2021.