Cita APA (7a ed.)

Khediri, A., Talbi, A., Jaouad, A., Maher, H., & Soltani, A. (2021). Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT. MDPI AG.

Cita Chicago Style (17a ed.)

Khediri, Abdelkrim, Abbasia Talbi, Abdelatif Jaouad, Hassan Maher, y Ali Soltani. Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT. MDPI AG, 2021.

Cita MLA (8a ed.)

Khediri, Abdelkrim, et al. Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT. MDPI AG, 2021.