Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT

In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state resistance of 7.3 Ω·mm and breakdown voltage of 500 V....

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Autores principales:	Abdelkrim Khediri, Abbasia Talbi, Abdelatif Jaouad, Hassan Maher, Ali Soltani
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	GaN HEMT parasitic current path high voltage breakdown Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/0056dc521d4241e89fb0665b8e2bd0c2
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spelling	oai:doaj.org-article:0056dc521d4241e89fb0665b8e2bd0c22021-11-25T18:22:47ZImpact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT10.3390/mi121112842072-666Xhttps://doaj.org/article/0056dc521d4241e89fb0665b8e2bd0c22021-10-01T00:00:00Zhttps://www.mdpi.com/2072-666X/12/11/1284https://doaj.org/toc/2072-666XIn this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state resistance of 7.3 Ω·mm and breakdown voltage of 500 V. The device has been modeled using numerical simulations to reproduce output and transfer characteristics. We identify, via experimental results and TCAD simulations, the main physical mechanisms responsible for the premature breakdown. The contribution of the AlN/Silicon substrate interface to the premature off-state breakdown is pointed out. Vertical leakage in lateral GaN devices significantly contributes to the off-state breakdown at high blocking voltages. The parasitic current path leads to premature breakdown before the appearance of avalanche or dielectric breakdown. A comparative study between a MOS-HEMT GaN on a silicon substrate with and without a SiNx interlayer at the AlN/Silicon substrate interface is presented here. We show that it is possible to increase the breakdown voltages of the fabricated transistors on a silicon substrate using SiNx interlayer.Abdelkrim KhediriAbbasia TalbiAbdelatif JaouadHassan MaherAli SoltaniMDPI AGarticleGaNHEMTparasitic current pathhigh voltage breakdownMechanical engineering and machineryTJ1-1570ENMicromachines, Vol 12, Iss 1284, p 1284 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	GaN HEMT parasitic current path high voltage breakdown Mechanical engineering and machinery TJ1-1570
spellingShingle	GaN HEMT parasitic current path high voltage breakdown Mechanical engineering and machinery TJ1-1570 Abdelkrim Khediri Abbasia Talbi Abdelatif Jaouad Hassan Maher Ali Soltani Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT
description	In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state resistance of 7.3 Ω·mm and breakdown voltage of 500 V. The device has been modeled using numerical simulations to reproduce output and transfer characteristics. We identify, via experimental results and TCAD simulations, the main physical mechanisms responsible for the premature breakdown. The contribution of the AlN/Silicon substrate interface to the premature off-state breakdown is pointed out. Vertical leakage in lateral GaN devices significantly contributes to the off-state breakdown at high blocking voltages. The parasitic current path leads to premature breakdown before the appearance of avalanche or dielectric breakdown. A comparative study between a MOS-HEMT GaN on a silicon substrate with and without a SiNx interlayer at the AlN/Silicon substrate interface is presented here. We show that it is possible to increase the breakdown voltages of the fabricated transistors on a silicon substrate using SiNx interlayer.
format	article
author	Abdelkrim Khediri Abbasia Talbi Abdelatif Jaouad Hassan Maher Ali Soltani
author_facet	Abdelkrim Khediri Abbasia Talbi Abdelatif Jaouad Hassan Maher Ali Soltani
author_sort	Abdelkrim Khediri
title	Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT
title_short	Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT
title_full	Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT
title_fullStr	Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT
title_full_unstemmed	Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT
title_sort	impact of iii-nitride/si interface preconditioning on breakdown voltage in gan-on-silicon hemt
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/0056dc521d4241e89fb0665b8e2bd0c2
work_keys_str_mv	AT abdelkrimkhediri impactofiiinitridesiinterfacepreconditioningonbreakdownvoltageinganonsiliconhemt AT abbasiatalbi impactofiiinitridesiinterfacepreconditioningonbreakdownvoltageinganonsiliconhemt AT abdelatifjaouad impactofiiinitridesiinterfacepreconditioningonbreakdownvoltageinganonsiliconhemt AT hassanmaher impactofiiinitridesiinterfacepreconditioningonbreakdownvoltageinganonsiliconhemt AT alisoltani impactofiiinitridesiinterfacepreconditioningonbreakdownvoltageinganonsiliconhemt
_version_	1718411237726879744

Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT

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