Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT

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Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT

In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state resistance of 7.3 Ω·mm and breakdown voltage of 500 V....

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Detalles Bibliográficos
Autores principales:	Abdelkrim Khediri, Abbasia Talbi, Abdelatif Jaouad, Hassan Maher, Ali Soltani
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	GaN HEMT parasitic current path high voltage breakdown Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/0056dc521d4241e89fb0665b8e2bd0c2
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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