Superjunction Power Transistors With Interface Charges: A Case Study for GaN
Recent progress in p-GaN trench-filling epitaxy has shown promise for the demonstration of GaN superjunction (SJ) devices. However, the presence of n-type interface charges at the regrowth interfaces has been widely observed. These interface charges pose great challenges to the design and performanc...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/00582700c8e245ffabfc1b5cce9d4da1 |
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