Superjunction Power Transistors With Interface Charges: A Case Study for GaN
Recent progress in p-GaN trench-filling epitaxy has shown promise for the demonstration of GaN superjunction (SJ) devices. However, the presence of n-type interface charges at the regrowth interfaces has been widely observed. These interface charges pose great challenges to the design and performanc...
Guardado en:
| Autores principales: | , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2020
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/00582700c8e245ffabfc1b5cce9d4da1 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Sea el primero en dejar un comentario!