Superjunction Power Transistors With Interface Charges: A Case Study for GaN
Recent progress in p-GaN trench-filling epitaxy has shown promise for the demonstration of GaN superjunction (SJ) devices. However, the presence of n-type interface charges at the regrowth interfaces has been widely observed. These interface charges pose great challenges to the design and performanc...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | article |
| Language: | EN |
| Published: |
IEEE
2020
|
| Subjects: | |
| Online Access: | https://doaj.org/article/00582700c8e245ffabfc1b5cce9d4da1 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|