A vertical silicon-graphene-germanium transistor
Graphene-base transistors were originally proposed for high-frequency applications, but the height of the emitter potential barrier limits the transistor performance towards the THz range. Here, the authors fabricate a vertical silicon-graphene-germanium transistor with a Schottky emitter enabling a...
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Auteurs principaux: | , , , , |
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Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2019
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Accès en ligne: | https://doaj.org/article/00828497c716419f84b215ef199cb5d6 |
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