A vertical silicon-graphene-germanium transistor

Graphene-base transistors were originally proposed for high-frequency applications, but the height of the emitter potential barrier limits the transistor performance towards the THz range. Here, the authors fabricate a vertical silicon-graphene-germanium transistor with a Schottky emitter enabling a...

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Enregistré dans:
Détails bibliographiques
Auteurs principaux: Chi Liu, Wei Ma, Maolin Chen, Wencai Ren, Dongming Sun
Format: article
Langue:EN
Publié: Nature Portfolio 2019
Sujets:
Q
Accès en ligne:https://doaj.org/article/00828497c716419f84b215ef199cb5d6
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