A vertical silicon-graphene-germanium transistor

Graphene-base transistors were originally proposed for high-frequency applications, but the height of the emitter potential barrier limits the transistor performance towards the THz range. Here, the authors fabricate a vertical silicon-graphene-germanium transistor with a Schottky emitter enabling a...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Chi Liu, Wei Ma, Maolin Chen, Wencai Ren, Dongming Sun
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/00828497c716419f84b215ef199cb5d6
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:00828497c716419f84b215ef199cb5d6
record_format	dspace
spelling	oai:doaj.org-article:00828497c716419f84b215ef199cb5d62021-12-02T16:58:17ZA vertical silicon-graphene-germanium transistor10.1038/s41467-019-12814-12041-1723https://doaj.org/article/00828497c716419f84b215ef199cb5d62019-10-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-12814-1https://doaj.org/toc/2041-1723Graphene-base transistors were originally proposed for high-frequency applications, but the height of the emitter potential barrier limits the transistor performance towards the THz range. Here, the authors fabricate a vertical silicon-graphene-germanium transistor with a Schottky emitter enabling a transition from MHz to GHz operation.Chi LiuWei MaMaolin ChenWencai RenDongming SunNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Chi Liu Wei Ma Maolin Chen Wencai Ren Dongming Sun A vertical silicon-graphene-germanium transistor
description	Graphene-base transistors were originally proposed for high-frequency applications, but the height of the emitter potential barrier limits the transistor performance towards the THz range. Here, the authors fabricate a vertical silicon-graphene-germanium transistor with a Schottky emitter enabling a transition from MHz to GHz operation.
format	article
author	Chi Liu Wei Ma Maolin Chen Wencai Ren Dongming Sun
author_facet	Chi Liu Wei Ma Maolin Chen Wencai Ren Dongming Sun
author_sort	Chi Liu
title	A vertical silicon-graphene-germanium transistor
title_short	A vertical silicon-graphene-germanium transistor
title_full	A vertical silicon-graphene-germanium transistor
title_fullStr	A vertical silicon-graphene-germanium transistor
title_full_unstemmed	A vertical silicon-graphene-germanium transistor
title_sort	vertical silicon-graphene-germanium transistor
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/00828497c716419f84b215ef199cb5d6
work_keys_str_mv	AT chiliu averticalsilicongraphenegermaniumtransistor AT weima averticalsilicongraphenegermaniumtransistor AT maolinchen averticalsilicongraphenegermaniumtransistor AT wencairen averticalsilicongraphenegermaniumtransistor AT dongmingsun averticalsilicongraphenegermaniumtransistor AT chiliu verticalsilicongraphenegermaniumtransistor AT weima verticalsilicongraphenegermaniumtransistor AT maolinchen verticalsilicongraphenegermaniumtransistor AT wencairen verticalsilicongraphenegermaniumtransistor AT dongmingsun verticalsilicongraphenegermaniumtransistor
_version_	1718382307808641024

A vertical silicon-graphene-germanium transistor

Ejemplares similares