A vertical silicon-graphene-germanium transistor
Graphene-base transistors were originally proposed for high-frequency applications, but the height of the emitter potential barrier limits the transistor performance towards the THz range. Here, the authors fabricate a vertical silicon-graphene-germanium transistor with a Schottky emitter enabling a...
Guardado en:
| Autores principales: | , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2019
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/00828497c716419f84b215ef199cb5d6 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|